Assignee
MIYOSHI MAKOTO
JP·7 granted patents·2 pending applications·20 citations·filing 2010–2012
Top patents by PatentIndex Score
9 records- 0183US9090993B2Epitaxial substrate comprising a superlattice group and method for manufacturing the epitaxial substrateMIYOSHI MAKOTO·Filed 2012·Granted Jul 28, 2015·6 cites·6 claims
- 0278US8471265B2Epitaxial substrate with intermediate layers for reinforcing compressive strain in laminated composition layers and manufacturing method thereofMIYOSHI MAKOTO·Filed 2012·Granted Jun 25, 2013·4 cites·20 claims
- 0378US8415690B2Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor elementMIYOSHI MAKOTO·Filed 2012·Granted Apr 9, 2013·4 cites·29 claims
- 0478US8410552B2Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor deviceMIYOSHI MAKOTO·Filed 2010·Granted Apr 2, 2013·5 cites·13 claims
- 0561US8890208B2Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor deviceMIYOSHI MAKOTO·Filed 2010·Granted Nov 18, 2014·1 cites·14 claims
- 0642US8598626B2Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structureMIYOSHI MAKOTO·Filed 2010·Granted Dec 3, 2013·0 cites·7 claims
- 0738US2012168771A1Semiconductor element, hemt element, and method of manufacturing semiconductor elementMIYOSHI MAKOTO·Filed 2012·Application pending·0 cites
- 0837US8872226B2Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor deviceMIYOSHI MAKOTO·Filed 2010·Granted Oct 28, 2014·0 cites·20 claims
- 0934US2012113596A1Electronic apparatus, method for mounting a device, and optical communication apparatusMIYOSHI MAKOTO·Filed 2011·Application pending·0 cites
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →