Assignee
MOMOSE KENJI
JP·4 granted patents·34 citations·filing 2008–2012
Top patents by PatentIndex Score
4 records- 0191US8716718B2Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrateMOMOSE KENJI·Filed 2012·Granted May 6, 2014·15 cites·13 claims
- 0288US8823015B2Silicon carbide epitaxial wafer and manufacturing method thereforMOMOSE KENJI·Filed 2010·Granted Sep 2, 2014·11 cites·5 claims
- 0378US9287121B2SIC epitaxial wafer and method for manufacturing sameMOMOSE KENJI·Filed 2012·Granted Mar 15, 2016·5 cites·6 claims
- 0469US8293623B2Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrateMOMOSE KENJI·Filed 2008·Granted Oct 23, 2012·3 cites·14 claims
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