Assignee
MOWRY ANTHONY
US6 patents
Top patents by PatentIndex Score
US8227266B2Jul 24, 2012
Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions
MOWRY ANTHONY6 citations83
US8212184B2Jul 3, 2012
Cold temperature control in a semiconductor device
MOWRY ANTHONY15 citations83
US8093634B2Jan 10, 2012
In situ formed drain and source regions in a silicon/germanium containing transistor device
MOWRY ANTHONY9 citations82
US8530894B2Sep 10, 2013
Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions
MOWRY ANTHONY0 citations51
US8564120B2Oct 22, 2013
Heat dissipation in temperature critical device areas of semiconductor devices by heat pipes connecting to the substrate backside
MOWRY ANTHONY1 citations49
US8507351B2Aug 13, 2013
Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation
MOWRY ANTHONY0 citations47