Assignee
MYERS WARD RACHAEL L
US·3 granted patents·3 citations·filing 2010–2014
Top patents by PatentIndex Score
3 records- 0161US10256090B2Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch processMYERS WARD RACHAEL L·Filed 2014·Granted Apr 9, 2019·1 cites·11 claims
- 0261US10256094B2Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch processMYERS WARD RACHAEL L·Filed 2014·Granted Apr 9, 2019·1 cites·12 claims
- 0359US9464366B2Reduction of basal plane dislocations in epitaxial SiCMYERS-WARD RACHAEL L·Filed 2010·Granted Oct 11, 2016·1 cites·18 claims
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