Assignee
NAKAHATA SEIJI
JP·4 granted patents·4 pending applications·9 citations·filing 2004–2012
Top patents by PatentIndex Score
8 records- 0179US8198177B2AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing sameNAKAHATA SEIJI·Filed 2011·Granted Jun 12, 2012·3 cites·1 claims
- 0274US8134223B2III-V compound crystal and semiconductor electronic circuit elementNAKAHATA SEIJI·Filed 2009·Granted Mar 13, 2012·3 cites·4 claims
- 0372US8304334B2III-V compound crystal and semiconductor electronic circuit elementNAKAHATA SEIJI·Filed 2012·Granted Nov 6, 2012·2 cites·5 claims
- 0464US8067300B2AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing sameNAKAHATA SEIJI·Filed 2009·Granted Nov 29, 2011·1 cites·39 claims
- 0543US2012305933A1Group iii nitride semiconductor light-emitting deviceNAKAHATA SEIJI·Filed 2012·Application pending·0 cites
- 0639US2005257733A1III nitride crystal and method for producing sameNAKAHATA SEIJI·Filed 2004·Application pending·0 cites
- 0739US2006012011A1Mehtod for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such methodNAKAHATA SEIJI·Filed 2004·Application pending·0 cites
- 0839US2006054942A1Light emitting deviceNAKAHATA SEIJI·Filed 2004·Application pending·0 cites
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →