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NEOPOLY INC
KR4 patents
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US6936504B2Aug 30, 2005
Poly-silicon thin film transistor having back bias effects and fabrication method thereof
NEOPOLY INC4 citations61
US7749826B2Jul 6, 2010
Method of fabricating thin film transistor using metal induced lateral crystallization by etch-stopper layer patterns
NEOPOLY INC2 citations58
US7906382B2Mar 15, 2011
Method of crystallizing amorphous semiconductor thin film and method of fabricating poly-crystalline thin film transistor using the same
NEOPOLY INC0 citations47
US7749777B2Jul 6, 2010
Method of applying electrical stress to low-temperature poly-crystalline thin film transistor
NEOPOLY INC0 citations47