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NEOSEMITECH CORP
KR3 patents
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US7524708B2Apr 28, 2009
Fabrication method of a high brightness light emitting diode with a bidirectionally angled substrate
NEOSEMITECH CORP2 citations53
US7679165B2Mar 16, 2010
High brightness light emitting diode with a bidirectionally angled substrate
NEOSEMITECH CORP0 citations43
US7767021B2Aug 3, 2010
Growing method of SiC single crystal
NEOSEMITECH CORP0 citations32