Assignee
NEWPORT FAB LLC
US·280 granted patents·2,424 citations·filing 1998–2022
Top patents by PatentIndex Score
280 records- 0199US10529922B1Substrates and heat spreaders for heat management and RF isolation in integrated semiconductor devices having phase-change material (PCM) radio frequency (RF) switchesNEWPORT FAB LLC·Filed 2019·Granted Jan 7, 2020·45 cites·19 claims
- 0298US10461253B1High reliability RF switch based on phase-change materialNEWPORT FAB LLC·Filed 2018·Granted Oct 29, 2019·36 cites·15 claims
- 0398US6509623B2Microelectronic air-gap structures and methods of forming the sameNEWPORT FAB LLC·Filed 2001·Granted Jan 21, 2003·276 cites·25 claims
- 0497US6630710B1Elevated channel MOSFETNEWPORT FAB LLC·Filed 2000·Granted Oct 7, 2003·175 cites·22 claims
- 0595US11031555B2Power handling improvements for phase-change material (PCM) radio frequency (RF) switch circuitsNEWPORT FAB LLC·Filed 2020·Granted Jun 8, 2021·3 cites·20 claims
- 0695US10068997B1SiGe heterojunction bipolar transistor with crystalline raised base on germanium etch stop layerNEWPORT FAB LLC·Filed 2017·Granted Sep 4, 2018·12 cites·14 claims
- 0795US10062712B1Method to fabricate both FD-SOI and PD-SOI devices within a single integrated circuitNEWPORT FAB LLC·Filed 2017·Granted Aug 28, 2018·28 cites·11 claims
- 0895US9190994B2RF switch branch having improved linearityNEWPORT FAB LLC·Filed 2013·Granted Nov 17, 2015·20 cites·20 claims
- 0993US6586297B1Method for integrating a metastable base into a high-performance HBT and related structureNEWPORT FAB LLC·Filed 2002·Granted Jul 1, 2003·71 cites·13 claims
- 1092US10454027B1Phase-change material (PCM) radio frequency (RF) switches with stressor layers and contact adhesion layersNEWPORT FAB LLC·Filed 2019·Granted Oct 22, 2019·6 cites·20 claims
- 1192US7589009B1Method for fabricating a top conductive layer in a semiconductor die and related structureNEWPORT FAB LLC·Filed 2006·Granted Sep 15, 2009·21 cites·20 claims
- 1291US10325833B1Bent polysilicon gate structure for small footprint radio frequency (RF) switchNEWPORT FAB LLC·Filed 2018·Granted Jun 18, 2019·9 cites·20 claims
- 1391US6444591B1Method for reducing contamination prior to epitaxial growth and related structureNEWPORT FAB LLC·Filed 2000·Granted Sep 3, 2002·49 cites·16 claims
- 1490US9640528B2Low-cost complementary BiCMOS integration schemeNEWPORT FAB LLC·Filed 2015·Granted May 2, 2017·8 cites·18 claims
- 1589US11276682B1Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) device and method of manufacturingNEWPORT FAB LLC·Filed 2020·Granted Mar 15, 2022·2 cites·20 claims
- 1689US6984577B1Damascene interconnect structure and fabrication method having air gaps between metal lines and metal layersNEWPORT FAB LLC·Filed 2000·Granted Jan 10, 2006·61 cites·18 claims
- 1789US6777777B1High density composite MIM capacitor with flexible routing in semiconductor diesNEWPORT FAB LLC·Filed 2003·Granted Aug 17, 2004·54 cites·12 claims
- 1888US9887123B2Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related methodNEWPORT FAB LLC·Filed 2015·Granted Feb 6, 2018·5 cites·13 claims
- 1988US6727716B1Probe card and probe needle for high frequency testingNEWPORT FAB LLC·Filed 2002·Granted Apr 27, 2004·129 cites·23 claims
- 2088US6680521B1High density composite MIM capacitor with reduced voltage dependence in semiconductor diesNEWPORT FAB LLC·Filed 2003·Granted Jan 20, 2004·46 cites·13 claims
- 2187US10319716B2Substrate isolation for low-loss radio frequency (RF) circuitsNEWPORT FAB LLC·Filed 2017·Granted Jun 11, 2019·5 cites·21 claims
- 2287US7462923B1Bipolar transistor formed using selective and non-selective epitaxy for base integration in a BiCMOS processNEWPORT FAB LLC·Filed 2007·Granted Dec 9, 2008·12 cites·12 claims
- 2387US7056822B1Method of fabricating an interconnect structure employing air gaps between metal lines and between metal layersNEWPORT FAB LLC·Filed 2000·Granted Jun 6, 2006·41 cites·6 claims
- 2487US6444136B1Fabrication of improved low-k dielectric structuresNEWPORT FAB LLC·Filed 2000·Granted Sep 3, 2002·46 cites·12 claims
- 2586US6514886B1Method for elimination of contaminants prior to epitaxyNEWPORT FAB LLC·Filed 2000·Granted Feb 4, 2003·32 cites·22 claims
- 2686US6430028B1Method for fabrication of an MIM capacitor and related structureNEWPORT FAB LLC·Filed 2000·Granted Aug 6, 2002·38 cites·10 claims
- 2786US6417094B1Dual-damascene interconnect structures and methods of fabricating sameNEWPORT FAB LLC·Filed 1998·Granted Jul 9, 2002·94 cites·15 claims
- 2885US11581215B2Body-source-tied semiconductor-on-insulator (SOI) transistorNEWPORT FAB LLC·Filed 2020·Granted Feb 14, 2023·2 cites·20 claims
- 2985US10916540B2Device including PCM RF switch integrated with group III-V semiconductorsNEWPORT FAB LLC·Filed 2018·Granted Feb 9, 2021·4 cites·26 claims
- 3085US10476001B1Manufacturing RF switch based on phase-change materialNEWPORT FAB LLC·Filed 2018·Granted Nov 12, 2019·3 cites·19 claims
- 3185US10044331B2High power RF switches using multiple optimized transistorsNEWPORT FAB LLC·Filed 2016·Granted Aug 7, 2018·4 cites·21 claims
- 3285US7897484B2Fabricating a top conductive layer in a semiconductor dieNEWPORT FAB LLC·Filed 2009·Granted Mar 1, 2011·9 cites·19 claims
- 3385US7335547B1Method for effective BiCMOS process integrationNEWPORT FAB LLC·Filed 2005·Granted Feb 26, 2008·13 cites·20 claims
- 3485US6740985B1Structure for bonding pad and method for its fabricationNEWPORT FAB LLC·Filed 2000·Granted May 25, 2004·36 cites·33 claims
- 3584US10530357B1Dynamic impedance circuit for uniform voltage distribution in a high power switch branchNEWPORT FAB LLC·Filed 2018·Granted Jan 7, 2020·4 cites·19 claims
- 3684US7772673B1Deep trench isolation and method for forming sameNEWPORT FAB LLC·Filed 2007·Granted Aug 10, 2010·12 cites·17 claims
- 3784US6534802B1Method for reducing base to collector capacitance and related structureNEWPORT FAB LLC·Filed 2001·Granted Mar 18, 2003·33 cites·22 claims
- 3883US10469121B2Non-linear shunt circuit for third order harmonic reduction in RF switchesNEWPORT FAB LLC·Filed 2017·Granted Nov 5, 2019·5 cites·4 claims
- 3983US10062644B2Copper interconnect for improving radio frequency (RF) silicon-on-insulator (SOI) switch field effect transistor (FET) stacksNEWPORT FAB LLC·Filed 2016·Granted Aug 28, 2018·4 cites·17 claims
- 4083US7704874B1Method for fabricating a frontside through-wafer via in a processed wafer and related structureNEWPORT FAB LLC·Filed 2006·Granted Apr 27, 2010·9 cites·19 claims
- 4183US6885056B1High-k dielectric stack in a MIM capacitor and method for its fabricationNEWPORT FAB LLC·Filed 2003·Granted Apr 26, 2005·34 cites·20 claims
- 4283US6759729B1Temperature insensitive resistor in an IC chipNEWPORT FAB LLC·Filed 2002·Granted Jul 6, 2004·32 cites·21 claims
- 4383US6627539B1Method of forming dual-damascene interconnect structures employing low-k dielectric materialsNEWPORT FAB LLC·Filed 1998·Granted Sep 30, 2003·70 cites·43 claims
- 4482US10062636B2Integration of thermally conductive but electrically isolating layers with semiconductor devicesNEWPORT FAB LLC·Filed 2016·Granted Aug 28, 2018·3 cites·12 claims
- 4582US7354840B1Method for opto-electronic integration on a SOI substrateNEWPORT FAB LLC·Filed 2007·Granted Apr 8, 2008·7 cites·20 claims
- 4681US10937960B2Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switchNEWPORT FAB LLC·Filed 2019·Granted Mar 2, 2021·2 cites·19 claims
- 4781US9755063B1RF SOI switches including low dielectric constant features between metal line structuresNEWPORT FAB LLC·Filed 2016·Granted Sep 5, 2017·4 cites·13 claims
- 4881US7291898B1Selective and non-selective epitaxy for base integration in a BiCMOS process and related structureNEWPORT FAB LLC·Filed 2005·Granted Nov 6, 2007·7 cites·14 claims
- 4981US6396122B1Method for fabricating on-chip inductors and related structureNEWPORT FAB LLC·Filed 2000·Granted May 28, 2002·32 cites·24 claims
- 5080US11233159B2Fabrication of semiconductor structure having group III-V device on group IV substrate with separately formed contacts using different metal linersNEWPORT FAB LLC·Filed 2020·Granted Jan 25, 2022·1 cites·20 claims
Showing the top 50 of 280 patent records by PatentIndex Score.
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