Assignee
NG MAN FAI
US·7 granted patents·16 citations·filing 2009–2012
Top patents by PatentIndex Score
7 records- 0183US8765537B2Metal gate fill by optimizing etch in sacrificial gate profileNG MAN FAI·Filed 2012·Granted Jul 1, 2014·6 cites·20 claims
- 0280US8222093B2Methods for forming barrier regions within regions of insulating material resulting in outgassing paths from the insulating material and related devicesNG MAN FAI·Filed 2010·Granted Jul 17, 2012·5 cites·20 claims
- 0373US8198170B2Semiconductor device fabrication method for improved isolation regions and defect-free active semiconductor materialNG MAN FAI·Filed 2010·Granted Jun 12, 2012·3 cites·16 claims
- 0468US8124515B2Gate etch optimization through silicon dopant profile changeNG MAN FAI·Filed 2009·Granted Feb 28, 2012·2 cites·12 claims
- 0551US8680624B2Methods for forming barrier regions within regions of insulating material resulting in outgassing paths from the insulating material and related devicesNG MAN FAI·Filed 2012·Granted Mar 25, 2014·0 cites·11 claims
- 0651US8390042B2Gate etch optimization through silicon dopant profile changeNG MAN FAI·Filed 2012·Granted Mar 5, 2013·0 cites·8 claims
- 0748US8987110B2Semiconductor device fabrication method for improved isolation regions and defect-free active semiconductor materialNG MAN FAI·Filed 2012·Granted Mar 24, 2015·0 cites·6 claims
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