Assignee
NONVOLATILE ELECTRONICS INC
US21 patents
Top patents by PatentIndex Score
US5617071AApr 1, 1997
Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses
NONVOLATILE ELECTRONICS INC116 citations98
US5831426ANov 3, 1998
Magnetic current sensor
NONVOLATILE ELECTRONICS INC177 citations97
US6300617B1Oct 9, 2001
Magnetic digital signal coupler having selected/reversal directions of magnetization
NONVOLATILE ELECTRONICS INC102 citations96
US6021065AFeb 1, 2000
Spin dependent tunneling memory
NONVOLATILE ELECTRONICS INC76 citations96
US5892708AApr 6, 1999
Magnetoresistive memory using large fraction of memory cell films for data storage
NONVOLATILE ELECTRONICS INC85 citations96
US5636159AJun 3, 1997
Magnetoresistive memory using large fractions of memory cell films for data storage
NONVOLATILE ELECTRONICS INC40 citations96
US5595830AJan 21, 1997
Magnetoresistive structure with alloy layer having two substantially immiscible components
NONVOLATILE ELECTRONICS INC52 citations96
US5569544AOct 29, 1996
Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components
NONVOLATILE ELECTRONICS INC66 citations96
US5424236AJun 13, 1995
Method for forming offset magnetoresistive memory structures
NONVOLATILE ELECTRONICS INC72 citations96
US5420819AMay 30, 1995
Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage
NONVOLATILE ELECTRONICS INC86 citations96
US5251170AOct 5, 1993
Offset magnetoresistive memory structures
NONVOLATILE ELECTRONICS INC92 citations96
US6168860B1Jan 2, 2001
Magnetic structure with stratified layers
NONVOLATILE ELECTRONICS INC27 citations93
US6275411B1Aug 14, 2001
Spin dependent tunneling memory
NONVOLATILE ELECTRONICS INC29 citations92
US6147900ANov 14, 2000
Spin dependent tunneling memory
NONVOLATILE ELECTRONICS INC32 citations92
US6072382AJun 6, 2000
Spin dependent tunneling sensor
NONVOLATILE ELECTRONICS INC41 citations92
US5966322AOct 12, 1999
Giant magnetoresistive effect memory cell
NONVOLATILE ELECTRONICS INC34 citations92
US5949707ASep 7, 1999
Giant magnetoresistive effect memory cell
NONVOLATILE ELECTRONICS INC36 citations92
US6252390B1Jun 26, 2001
Magnetically coupled signal isolator
NONVOLATILE ELECTRONICS INC38 citations91
US5729137AMar 17, 1998
Magnetic field sensors individualized field reducers
NONVOLATILE ELECTRONICS INC32 citations91
US5768180AJun 16, 1998
Magnetoresistive memory using large fractions of memory cell films for data storage
NONVOLATILE ELECTRONICS INC14 citations82
US6340886B1Jan 22, 2002
Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surface
NONVOLATILE ELECTRONICS INC13 citations74