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NORSTEL AB
SE4 patents
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US7531433B2May 12, 2009
Homoepitaxial growth of SiC on low off-axis SiC wafers
NORSTEL AB23 citations89
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Device and method for producing single crystals by vapor deposition
NORSTEL AB31 citations87
US7018597B2Mar 28, 2006
High resistivity silicon carbide single crystal
NORSTEL AB19 citations87
US7482068B2Jan 27, 2009
Lightly doped silicon carbide wafer and use thereof in high power devices
NORSTEL AB3 citations60