Assignee
OHKI TOSHIHIRO
JP·10 granted patents·36 citations·filing 2009–2012
Top patents by PatentIndex Score
10 records- 0192US9093512B2Compound semiconductor deviceOHKI TOSHIHIRO·Filed 2011·Granted Jul 28, 2015·15 cites·10 claims
- 0282US9379229B2Semiconductor apparatus including protective film on gate electrode and method for manufacturing the semiconductor apparatusOHKI TOSHIHIRO·Filed 2012·Granted Jun 28, 2016·5 cites·9 claims
- 0379US9035353B2Compound semiconductor device comprising electrode above compound semiconductor layer and method of manufacturing the sameOHKI TOSHIHIRO·Filed 2012·Granted May 19, 2015·5 cites·17 claims
- 0476US8278688B2Compound semiconductor device and manufacturing method thereofOHKI TOSHIHIRO·Filed 2009·Granted Oct 2, 2012·6 cites·14 claims
- 0569US8969919B2Field-effect transistorOHKI TOSHIHIRO·Filed 2011·Granted Mar 3, 2015·2 cites·5 claims
- 0667US8389351B2Method for fabricating semiconductor deviceOHKI TOSHIHIRO·Filed 2011·Granted Mar 5, 2013·2 cites·20 claims
- 0762US8809136B2Semiconductor device and method for manufacturing the sameOHKI TOSHIHIRO·Filed 2011·Granted Aug 19, 2014·1 cites·12 claims
- 0851US8829569B2Semiconductor apparatus having fluorine containing region formed in recessed portion of semiconductor layerOHKI TOSHIHIRO·Filed 2011·Granted Sep 9, 2014·0 cites·8 claims
- 0945US8519441B2High speed high power nitride semiconductor deviceOHKI TOSHIHIRO·Filed 2011·Granted Aug 27, 2013·0 cites·7 claims
- 1042US8598571B2Method of manufacturing a compound semiconductor device with compound semiconductor lamination structureOHKI TOSHIHIRO·Filed 2011·Granted Dec 3, 2013·0 cites·18 claims
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