Assignee
OKAHISA TAKUJI
JP·4 granted patents·1 pending application·4 citations·filing 2006–2010
Top patents by PatentIndex Score
5 records- 0179US8421190B2Group III nitride semiconductor substrate and manufacturing method thereofOKAHISA TAKUJI·Filed 2010·Granted Apr 16, 2013·4 cites·7 claims
- 0260US8698282B2Group III nitride semiconductor crystal substrate and semiconductor deviceOKAHISA TAKUJI·Filed 2008·Granted Apr 15, 2014·0 cites·12 claims
- 0350US8845992B2III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrateOKAHISA TAKUJI·Filed 2008·Granted Sep 30, 2014·0 cites·5 claims
- 0449US2007012943A1Group III nitride semiconductor substrate and manufacturing method thereofOKAHISA TAKUJI·Filed 2006·Application pending·0 cites
- 0546US8097528B2Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor deviceOKAHISA TAKUJI·Filed 2010·Granted Jan 17, 2012·0 cites·3 claims
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