Assignee
OSADA KENICHI
JP6 patents
Top patents by PatentIndex Score
US8482083B2Jul 9, 2013
Semiconductor integrated circuit device including SRAM memory cells having two P-channel MOS transistors and four N-channel MOS transistors and with four wiring layers serving as their gate electrodes
OSADA KENICHI4 citations73
US8437179B2May 7, 2013
Semiconductor integrated circuit device with reduced leakage current
OSADA KENICHI3 citations73
US8253227B2Aug 28, 2012
Semiconductor integrated circuit device
OSADA KENICHI6 citations72
US8232589B2Jul 31, 2012
Semiconductor integrated circuit device with reduced leakage current
OSADA KENICHI1 citations62
US8125017B2Feb 28, 2012
Semiconductor integrated circuit device with reduced leakage current
OSADA KENICHI1 citations62
US9286968B2Mar 15, 2016
Semiconductor integrated circuit device including SRAM cell array and a wiring layer for supplying voltage to well regions of SRAM cells provided on a region exterior of SRAM cell array
OSADA KENICHI0 citations52