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OTT ANDREW
US2 patents
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US8120114B2Feb 21, 2012
Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate
OTT ANDREW13 citations81
US8399317B2Mar 19, 2013
Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor
OTT ANDREW3 citations59