Assignee
OYA MITSUAKI
JP·7 granted patents·6 citations·filing 2010–2011
Top patents by PatentIndex Score
7 records- 0185US8299490B2Nitride-based semiconductor device having electrode on m-planeOYA MITSUAKI·Filed 2011·Granted Oct 30, 2012·6 cites·14 claims
- 0252US8309984B2Nitride-based semiconductor device having electrode on m-planeOYA MITSUAKI·Filed 2011·Granted Nov 13, 2012·0 cites·12 claims
- 0349US8318594B2Method for fabricating nitride-based semiconductor device having electrode on m-planeOYA MITSUAKI·Filed 2010·Granted Nov 27, 2012·0 cites·8 claims
- 0447US8164109B2Nitride semiconductor element and method for producing the sameOYA MITSUAKI·Filed 2011·Granted Apr 24, 2012·0 cites·21 claims
- 0546US8441108B2Nitride semiconductor element having electrode on m-plane and method for producing the sameOYA MITSUAKI·Filed 2010·Granted May 14, 2013·0 cites·27 claims
- 0646US8304802B2Nitride-based semiconductor device having electrode on m-planeOYA MITSUAKI·Filed 2011·Granted Nov 6, 2012·0 cites·14 claims
- 0744US8334199B2Method for fabricating nitride-based semiconductor device having electrode on m-planeOYA MITSUAKI·Filed 2010·Granted Dec 18, 2012·0 cites·9 claims
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