Assignee
PARK JONGCHUL
KR·10 granted patents·2 pending applications·28 citations·filing 2011–2017
Top patents by PatentIndex Score
12 records- 0186US8435876B2Method of manufacturing semiconductor devicePARK JONGCHUL·Filed 2011·Granted May 7, 2013·9 cites·20 claims
- 0285US8581314B2Semiconductor devices having spacers disposed on an inner sidewall of a contact hole formed in a layer of the semiconductor devices, and a contact plug disposed thereinPARK JONGCHUL·Filed 2011·Granted Nov 12, 2013·8 cites·15 claims
- 0377US9627610B2Method of forming a pattern using ion beams of bilateral symmetry, a method of forming a magnetic memory device using the same, and an ion beam apparatus generating ion beams of bilateral symmetryPARK JONGCHUL·Filed 2015·Granted Apr 18, 2017·2 cites·19 claims
- 0473US10115893B2Data storage devices and methods for manufacturing the samePARK JONGCHUL·Filed 2017·Granted Oct 30, 2018·1 cites·19 claims
- 0573US9515255B2Methods of manufacturing semiconductor devices using cavities to distribute conductive patterning residuePARK JONGCHUL·Filed 2014·Granted Dec 6, 2016·2 cites·18 claims
- 0670US8338254B2Methods of manufacturing self aligned buried contact electrodes for vertical channel transistorsPARK JONGCHUL·Filed 2011·Granted Dec 25, 2012·3 cites·15 claims
- 0760US9634240B2Magnetic memory devicesPARK JONGCHUL·Filed 2014·Granted Apr 25, 2017·2 cites·18 claims
- 0856US9991442B2Method for manufacturing magnetic memory devicePARK JONGCHUL·Filed 2017·Granted Jun 5, 2018·1 cites·19 claims
- 0950US9871194B2Ion beam apparatus generating ion beams of bilateral symmetryPARK JONGCHUL·Filed 2017·Granted Jan 16, 2018·0 cites·19 claims
- 1040US9647201B2Magnetic memory devicesPARK JONGCHUL·Filed 2015·Granted May 9, 2017·0 cites·13 claims
- 1136US2012139028A1Semiconductor memory device and emthod of forming the samePARK JONGCHUL·Filed 2011·Application pending·0 cites
- 1235US2014117477A1Magnetic memory devices and methods of fabricating the samePARK JONGCHUL·Filed 2013·Application pending·0 cites
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