Assignee
PEI CHENGWEN
US11 patents
Top patents by PatentIndex Score
US9076817B2Jul 7, 2015
Epitaxial extension CMOS transistor
PEI CHENGWEN7 citations84
US8470684B2Jun 25, 2013
Suppression of diffusion in epitaxial buried plate for deep trenches
PEI CHENGWEN10 citations84
US8409989B2Apr 2, 2013
Structure and method to fabricate a body contact
PEI CHENGWEN5 citations84
US8629017B2Jan 14, 2014
Structure and method to form EDRAM on SOI substrate
PEI CHENGWEN3 citations63
US8188528B2May 29, 2012
Structure and method to form EDRAM on SOI substrate
PEI CHENGWEN5 citations63
US8299530B2Oct 30, 2012
Structure and method to fabricate pFETS with superior GIDL by localizing workfunction
PEI CHENGWEN2 citations62
US9064745B2Jun 23, 2015
Sublithographic width finFET employing solid phase epitaxy
PEI CHENGWEN1 citations52
US8535544B2Sep 17, 2013
Structure and method to form nanopore
PEI CHENGWEN1 citations52
US8455327B2Jun 4, 2013
Trench capacitor with spacer-less fabrication process
PEI CHENGWEN1 citations52
US8299573B2Oct 30, 2012
Trench capacitor
PEI CHENGWEN0 citations52
US8642440B2Feb 4, 2014
Capacitor with deep trench ion implantation
PEI CHENGWEN1 citations51