Assignee
PFC DEVICE CORP
TW·12 granted patents·9 citations·filing 2012–2014
Top patents by PatentIndex Score
12 records- 0175US8704298B1MOS diode with termination structure and method for manufacturing the samePFC DEVICE CORP·Filed 2013·Granted Apr 22, 2014·4 cites·16 claims
- 0274US8853748B2Rectifier with vertical MOS structurePFC DEVICE CORP·Filed 2014·Granted Oct 7, 2014·2 cites·10 claims
- 0371US8728878B2MOS P-N junction diode device and method for manufacturing the samePFC DEVICE CORP·Filed 2013·Granted May 20, 2014·3 cites·12 claims
- 0459US8993427B2Method for manufacturing rectifier with vertical MOS structurePFC DEVICE CORP·Filed 2014·Granted Mar 31, 2015·0 cites·20 claims
- 0557US8890279B2Trench Schottky rectifier device and method for manufacturing the samePFC DEVICE CORP·Filed 2013·Granted Nov 18, 2014·0 cites·6 claims
- 0655US9029235B2Trench isolation MOS P-N junction diode device and method for manufacturing the samePFC DEVICE CORP·Filed 2014·Granted May 12, 2015·0 cites·5 claims
- 0755US8921949B2MOS P-N junction diode with enhanced response speed and manufacturing method thereofPFC DEVICE CORP·Filed 2012·Granted Dec 30, 2014·0 cites·1 claims
- 0854US8735228B2Trench isolation MOS P-N junction diode device and method for manufacturing the samePFC DEVICE CORP·Filed 2013·Granted May 27, 2014·0 cites·5 claims
- 0949US9064904B2MOS P-N junction Schottky diode device and method for manufacturing the samePFC DEVICE CORP·Filed 2014·Granted Jun 23, 2015·0 cites·12 claims
- 1048US8753963B2Manufacturing method of multi-trench termination structure for semiconductor devicePFC DEVICE CORP·Filed 2013·Granted Jun 17, 2014·0 cites·10 claims
- 1146US8927401B2Trench Schottky diode and method for manufacturing the samePFC DEVICE CORP·Filed 2013·Granted Jan 6, 2015·0 cites·12 claims
- 1241US8809946B2Wide trench termination structure for semiconductor devicePFC DEVICE CORP·Filed 2013·Granted Aug 19, 2014·0 cites·10 claims
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