Assignee
POELZL MARTIN
AT11 patents
Top patents by PatentIndex Score
US8642459B2Feb 4, 2014
Method for forming a semiconductor device with an isolation region on a gate electrode
POELZL MARTIN4 citations73
US9082746B2Jul 14, 2015
Method for forming self-aligned trench contacts of semiconductor components and a semiconductor component
POELZL MARTIN2 citations63
US8637367B2Jan 28, 2014
Method for producing an insulation layer between two electrodes
POELZL MARTIN2 citations63
US8633539B2Jan 21, 2014
Trench transistor and manufacturing method of the trench transistor
POELZL MARTIN3 citations63
US8313995B2Nov 20, 2012
Method for manufacturing a semiconductor device
POELZL MARTIN2 citations63
US8097916B2Jan 17, 2012
Method for insulating a semiconducting material in a trench from a substrate
POELZL MARTIN3 citations63
US8778751B2Jul 15, 2014
Method for producing a structure element and semiconductor component comprising a structure element
POELZL MARTIN0 citations52
US8445956B2May 21, 2013
Method for manufacturing a semiconductor device and semiconductor device
POELZL MARTIN0 citations52
US8093654B2Jan 10, 2012
Vertical transistor component
POELZL MARTIN0 citations52
US8062954B2Nov 22, 2011
Method for manufacturing a field plate in a trench of a power transistor
POELZL MARTIN1 citations52
US8803230B2Aug 12, 2014
Semiconductor transistor having trench contacts and method for forming therefor
POELZL MARTIN0 citations40