Assignee

QIMONDS AG

DE·1 granted patent·8 citations·filing 2005–2005

Technology mixC23C1 H01G1 H10D1 H10P1

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1 record

0175US7531405B2Method of manufacturing a dielectric layer and corresponding semiconductor deviceQIMONDS AG·Filed 2005·Granted May 12, 2009·8 cites·6 claims

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