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RAMIN MANFRED

US3 patents

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US8304333B2Nov 6, 2012

Method of forming a high-k gate dielectric layer

RAMIN MANFRED2 citations59
US8409943B2Apr 2, 2013

Work function adjustment with the implant of lanthanides

RAMIN MANFRED0 citations48
US8748246B2Jun 10, 2014

Integration scheme for dual work function metal gates

RAMIN MANFRED1 citations39