Assignee

RAMTRON INT CORP

US132 patents

Top patents by PatentIndex Score

US5434572AJul 18, 1995

System and method for initiating communications between a controller and a selected subset of multiple transponders in a common RF field

RAMTRON INT CORP162 citations99

US6894549B2May 17, 2005

Ferroelectric non-volatile logic elements

RAMTRON INT CORP438 citations98

US6249014B1Jun 19, 2001

Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circuit memory devices

RAMTRON INT CORP201 citations98

US5721862AFeb 24, 1998

Enhanced DRAM with single row SRAM cache for all device read operations

RAMTRON INT CORP117 citations98

US5610099AMar 11, 1997

Process for fabricating transistors using composite nitride structure

RAMTRON INT CORP101 citations98

US6172927B1Jan 9, 2001

First-in, first-out integrated circuit memory device incorporating a retransmit function

RAMTRON INT CORP121 citations97

US6141237AOct 31, 2000

Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circuit memory devices

RAMTRON INT CORP74 citations96

US6072741AJun 6, 2000

First-in, first-out integrated circuit memory device incorporating a retransmit function

RAMTRON INT CORP54 citations96

US5909624AJun 1, 1999

Method of making integration of high value capacitor with ferroelectric memory

RAMTRON INT CORP51 citations96

US5608246AMar 4, 1997

Integration of high value capacitor with ferroelectric memory

RAMTRON INT CORP82 citations96

US5598366AJan 28, 1997

Ferroelectric nonvolatile random access memory utilizing self-bootstrapping plate line segment drivers

RAMTRON INT CORP62 citations96

US5580814ADec 3, 1996

Method for making a ferroelectric memory cell with a ferroelectric capacitor overlying a memory transistor

RAMTRON INT CORP89 citations96

US5523595AJun 4, 1996

Semiconductor device having a transistor, a ferroelectric capacitor and a hydrogen barrier film

RAMTRON INT CORP68 citations96

US5495117AFeb 27, 1996

Stacked ferroelectric memory cell

RAMTRON INT CORP53 citations96

US5479132ADec 26, 1995

Noise and glitch suppressing filter with feedback

RAMTRON INT CORP54 citations96

US5394367AFeb 28, 1995

System and method for write-protecting predetermined portions of a memory array

RAMTRON INT CORP112 citations96

US6459609B1Oct 1, 2002

Self referencing 1T/1C ferroelectric random access memory

RAMTRON INT CORP77 citations95

US6252793B1Jun 26, 2001

Reference cell configuration for a 1T/1C ferroelectric memory

RAMTRON INT CORP59 citations95

US6242299B1Jun 5, 2001

Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode

RAMTRON INT CORP93 citations95

US6150184ANov 21, 2000

Method of fabricating partially or completely encapsulated top electrode of a ferroelectric capacitor

RAMTRON INT CORP85 citations95

US6027947AFeb 22, 2000

Partially or completely encapsulated top electrode of a ferroelectric capacitor

RAMTRON INT CORP45 citations95

US6028783AFeb 22, 2000

Memory cell configuration for a 1T/1C ferroelectric memory

RAMTRON INT CORP57 citations95

US5926110AJul 20, 1999

Programmable output devices for controlling signal levels in an RF/ID transponder

RAMTRON INT CORP66 citations95

US5864932AFeb 2, 1999

Partially or completely encapsulated top electrode of a ferroelectric capacitor

RAMTRON INT CORP66 citations95

US5802583ASep 1, 1998

Sysyem and method providing selective write protection for individual blocks of memory in a non-volatile memory device

RAMTRON INT CORP80 citations95

US5578867ANov 26, 1996

Passivation method and structure using hard ceramic materials or the like

RAMTRON INT CORP55 citations95

US5572459ANov 5, 1996

Voltage reference for a ferroelectric 1T/1C based memory

RAMTRON INT CORP108 citations95

US5530668AJun 25, 1996

Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage

RAMTRON INT CORP71 citations95

US5475248ADec 12, 1995

Semiconductor device with a conductive reaction-preventing film

RAMTRON INT CORP104 citations95

US5438023AAug 1, 1995

Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like

RAMTRON INT CORP73 citations95

US5216572AJun 1, 1993

Structure and method for increasing the dielectric constant of integrated ferroelectric capacitors

RAMTRON INT CORP95 citations95

US5191510AMar 2, 1993

Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices

RAMTRON INT CORP141 citations95

US6281023B2Aug 28, 2001

Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced encapsulation layer

RAMTRON INT CORP59 citations94

US5880989AMar 9, 1999

Sensing methodology for a 1T/1C ferroelectric memory

RAMTRON INT CORP51 citations94

US6090443AJul 18, 2000

Multi-layer approach for optimizing ferroelectric film performance

RAMTRON INT CORP56 citations93

US6002634ADec 14, 1999

Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory

RAMTRON INT CORP20 citations93

US5890199AMar 30, 1999

Data processor incorporating a ferroelectric memory array selectably configurable as read/write and read only memory

RAMTRON INT CORP62 citations93

US5525528AJun 11, 1996

Ferroelectric capacitor renewal method

RAMTRON INT CORP65 citations93

US5519566AMay 21, 1996

Method of manufacturing ferroelectric bismuth layered oxides

RAMTRON INT CORP78 citations93

US5426075AJun 20, 1995

Method of manufacturing ferroelectric bismuth layered oxides

RAMTRON INT CORP73 citations93

US5381364AJan 10, 1995

Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation

RAMTRON INT CORP137 citations93

US5369296ANov 29, 1994

Semiconductor device having a ferroelectric film in a through-hole

RAMTRON INT CORP36 citations93

US5229309AJul 20, 1993

Method of manufacturing semiconductor device using a ferroelectric film over a source region

RAMTRON INT CORP26 citations93

US7924599B1Apr 12, 2011

Non-volatile memory circuit using ferroelectric capacitor storage element

RAMTRON INT CORP28 citations92

US6717839B1Apr 6, 2004

Bit-line shielding method for ferroelectric memories

RAMTRON INT CORP21 citations92

US6650158B2Nov 18, 2003

Ferroelectric non-volatile logic elements

RAMTRON INT CORP28 citations92

Showing the top 50 of 132 patents by PatentIndex Score.

RAMTRON INT CORP

Top patents by PatentIndex Score

System and method for initiating communications between a controller and a selected subset of multiple transponders in a common RF field

Ferroelectric non-volatile logic elements

Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circuit memory devices

Enhanced DRAM with single row SRAM cache for all device read operations

Process for fabricating transistors using composite nitride structure

First-in, first-out integrated circuit memory device incorporating a retransmit function

Ferroelectric non-volatile latch circuits

Low loss, regulated charge pump with integrated ferroelectric capacitors

Enhanced DRAM with all reads from on-chip cache and all writers to memory array

Semiconductor device with ferroelectric and method of manufacturing the same

Hydrogen barrier encapsulation techniques for the control of hydrogen induced degradation of ferroelectric capacitors in conjunction with multilevel metal processing for non-volatile integrated circuit memory devices

First-in, first-out integrated circuit memory device incorporating a retransmit function

Method of making integration of high value capacitor with ferroelectric memory

Integration of high value capacitor with ferroelectric memory

Ferroelectric nonvolatile random access memory utilizing self-bootstrapping plate line segment drivers

Method for making a ferroelectric memory cell with a ferroelectric capacitor overlying a memory transistor

Semiconductor device having a transistor, a ferroelectric capacitor and a hydrogen barrier film

Stacked ferroelectric memory cell

Noise and glitch suppressing filter with feedback

System and method for write-protecting predetermined portions of a memory array

Self referencing 1T/1C ferroelectric random access memory

Reference cell configuration for a 1T/1C ferroelectric memory

Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode

Method of fabricating partially or completely encapsulated top electrode of a ferroelectric capacitor

Partially or completely encapsulated top electrode of a ferroelectric capacitor

Memory cell configuration for a 1T/1C ferroelectric memory

Programmable output devices for controlling signal levels in an RF/ID transponder

Partially or completely encapsulated top electrode of a ferroelectric capacitor

Sysyem and method providing selective write protection for individual blocks of memory in a non-volatile memory device

Passivation method and structure using hard ceramic materials or the like

Voltage reference for a ferroelectric 1T/1C based memory

Ferroelectric memory sensing scheme using bit lines precharged to a logic one voltage

Semiconductor device with a conductive reaction-preventing film

Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like

Structure and method for increasing the dielectric constant of integrated ferroelectric capacitors

Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices

Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced encapsulation layer

Sensing methodology for a 1T/1C ferroelectric memory

Multi-layer approach for optimizing ferroelectric film performance

Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory

Data processor incorporating a ferroelectric memory array selectably configurable as read/write and read only memory

Ferroelectric capacitor renewal method

Method of manufacturing ferroelectric bismuth layered oxides

Method of manufacturing ferroelectric bismuth layered oxides

Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation

Semiconductor device having a ferroelectric film in a through-hole

Method of manufacturing semiconductor device using a ferroelectric film over a source region

Non-volatile memory circuit using ferroelectric capacitor storage element

Bit-line shielding method for ferroelectric memories

Ferroelectric non-volatile logic elements