Assignee
REN ZHIBIN
US·2 granted patents·3 citations·filing 2009–2010
Technology mixH10D2
Top patents by PatentIndex Score
2 records- 0163US8202780B2Method for manufacturing a FinFET device comprising a mask to define a gate perimeter and another mask to define fin regionsREN ZHIBIN·Filed 2009·Granted Jun 19, 2012·3 cites·19 claims
- 0232US8299546B2Semiconductor devices with vertical extensions for lateral scalingREN ZHIBIN·Filed 2010·Granted Oct 30, 2012·0 cites·16 claims
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