Assignee
RYU SEI-HYUNG
US·9 granted patents·1 pending application·70 citations·filing 2005–2012
Top patents by PatentIndex Score
10 records- 0193US8492827B2Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistorsRYU SEI-HYUNG·Filed 2011·Granted Jul 23, 2013·13 cites·21 claims
- 0287US9142662B2Field effect transistor devices with low source resistanceRYU SEI-HYUNG·Filed 2011·Granted Sep 22, 2015·11 cites·25 claims
- 0387US9029945B2Field effect transistor devices with low source resistanceRYU SEI-HYUNG·Filed 2011·Granted May 12, 2015·11 cites·23 claims
- 0486US8901699B2Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injectionRYU SEI-HYUNG·Filed 2005·Granted Dec 2, 2014·11 cites·10 claims
- 0582US8629509B2High voltage insulated gate bipolar transistors with minority carrier diverterRYU SEI-HYUNG·Filed 2009·Granted Jan 14, 2014·9 cites·25 claims
- 0680US8901639B2Monolithic bidirectional silicon carbide switching devicesRYU SEI-HYUNG·Filed 2012·Granted Dec 2, 2014·4 cites·18 claims
- 0775US8610130B2Monolithic high voltage switching devicesRYU SEI-HYUNG·Filed 2009·Granted Dec 17, 2013·5 cites·16 claims
- 0872US8124480B2Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminationsRYU SEI-HYUNG·Filed 2010·Granted Feb 28, 2012·2 cites·6 claims
- 0968US9515135B2Edge termination structures for silicon carbide devicesRYU SEI-HYUNG·Filed 2006·Granted Dec 6, 2016·4 cites·21 claims
- 1041US2006261346A1High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the sameRYU SEI-HYUNG·Filed 2005·Application pending·0 cites
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