Assignee
SAKAMOTO HIDEMITSU
JP·3 granted patents·1 pending application·5 citations·filing 2007–2010
Top patents by PatentIndex Score
4 records- 0180US9080254B2Method of producing SiC single crystalSAKAMOTO HIDEMITSU·Filed 2010·Granted Jul 14, 2015·2 cites·7 claims
- 0274US8118933B2Method of manufacturing a silicon carbide single crystalSAKAMOTO HIDEMITSU·Filed 2007·Granted Feb 21, 2012·3 cites·4 claims
- 0354US8328937B2Seed crystal axis for solution growth of single crystalSAKAMOTO HIDEMITSU·Filed 2009·Granted Dec 11, 2012·0 cites·17 claims
- 0442US2009084309A1METHOD OF PRODUCTION OF SiC SINGLE CRYSTALSAKAMOTO HIDEMITSU·Filed 2007·Application pending·0 cites
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