Assignee

SAMSUNG ELECTRONICS OO LTD

KR·1 granted patent·4 citations·filing 2004–2004

Technology mixH10D1 H10P1 H10W1

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0151US7180188B2Contact structure of semiconductor devices and method of fabricating the sameSAMSUNG ELECTRONICS OO LTD·Filed 2004·Granted Feb 20, 2007·4 cites·8 claims

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