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SATO MASASHIGE
JP
2 patents
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US8072714B2
Dec 6, 2011
Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device
SATO MASASHIGE
6 citations
59
US8570691B2
Oct 29, 2013
TMR sensor film using a tantalum insertion layer and systems thereof
SATO MASASHIGE
3 citations
57