Assignee

SCHENK DAVID

FR·1 granted patent·9 citations·filing 2012–2012

Technology mixB82Y1 C30B1 H01L1 H01S1 H10D1 H10H1

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0178US9093271B2Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said methodSCHENK DAVID·Filed 2012·Granted Jul 28, 2015·9 cites·12 claims

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