Assignee
SCHOWALTER LEO J
US·12 granted patents·161 citations·filing 2006–2021
Top patents by PatentIndex Score
12 records- 0198US8962359B2Photon extraction from nitride ultraviolet light-emitting devicesSCHOWALTER LEO J·Filed 2012·Granted Feb 24, 2015·35 cites·18 claims
- 0296US8123859B2Method and apparatus for producing large, single-crystals of aluminum nitrideSCHOWALTER LEO J·Filed 2010·Granted Feb 28, 2012·24 cites·24 claims
- 0395US8222650B2Nitride semiconductor heterostructures and related methodsSCHOWALTER LEO J·Filed 2009·Granted Jul 17, 2012·36 cites·27 claims
- 0494US9437430B2Thick pseudomorphic nitride epitaxial layersSCHOWALTER LEO J·Filed 2008·Granted Sep 6, 2016·34 cites·28 claims
- 0594US8545629B2Method and apparatus for producing large, single-crystals of aluminum nitrideSCHOWALTER LEO J·Filed 2006·Granted Oct 1, 2013·22 cites·13 claims
- 0691US10074784B2Photon extraction from nitride ultraviolet light-emitting devicesSCHOWALTER LEO J·Filed 2015·Granted Sep 11, 2018·6 cites·24 claims
- 0783US10407798B2Two-stage seeded growth of large aluminum nitride single crystalsSCHOWALTER LEO J·Filed 2018·Granted Sep 10, 2019·2 cites·20 claims
- 0876US10612156B2Two-stage seeded growth of large aluminum nitride single crystalsSCHOWALTER LEO J·Filed 2019·Granted Apr 7, 2020·1 cites·20 claims
- 0976US10615322B2Photon extraction from nitride ultraviolet light-emitting devicesSCHOWALTER LEO J·Filed 2018·Granted Apr 7, 2020·1 cites·28 claims
- 1074US10971665B2Photon extraction from nitride ultraviolet light-emitting devicesSCHOWALTER LEO J·Filed 2020·Granted Apr 6, 2021·0 cites·35 claims
- 1169US11384449B2Two-stage seeded growth of large aluminum nitride single crystalsSCHOWALTER LEO J·Filed 2020·Granted Jul 12, 2022·0 cites·18 claims
- 1258US11990562B1Ultraviolet light-emitting devices having enhanced light outputSCHOWALTER LEO J·Filed 2021·Granted May 21, 2024·0 cites·14 claims
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