Assignee
SCHRICKER APRIL D
US·10 granted patents·1 pending application·37 citations·filing 2009–2012
Top patents by PatentIndex Score
11 records- 0182US8467224B2Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefromSCHRICKER APRIL D·Filed 2009·Granted Jun 18, 2013·11 cites·14 claims
- 0282US8183121B2Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistanceSCHRICKER APRIL D·Filed 2009·Granted May 22, 2012·10 cites·24 claims
- 0378US8309407B2Electronic devices including carbon-based films having sidewall liners, and methods of forming such devicesSCHRICKER APRIL D·Filed 2009·Granted Nov 13, 2012·8 cites·29 claims
- 0473US8431417B2Methods for increasing carbon nano-tube (CNT) yield in memory devicesSCHRICKER APRIL D·Filed 2009·Granted Apr 30, 2013·3 cites·18 claims
- 0570US8445385B2Methods for etching carbon nano-tube films for use in non-volatile memoriesSCHRICKER APRIL D·Filed 2009·Granted May 21, 2013·3 cites·36 claims
- 0664US8530318B2Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the sameSCHRICKER APRIL D·Filed 2009·Granted Sep 10, 2013·1 cites·15 claims
- 0757US8304284B2Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the sameSCHRICKER APRIL D·Filed 2009·Granted Nov 6, 2012·0 cites·20 claims
- 0853US8878235B2Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the sameSCHRICKER APRIL D·Filed 2011·Granted Nov 4, 2014·1 cites·29 claims
- 0947US8507315B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSCHRICKER APRIL D·Filed 2012·Granted Aug 13, 2013·0 cites·9 claims
- 1045US8173486B2Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the sameSCHRICKER APRIL D·Filed 2010·Granted May 8, 2012·0 cites·15 claims
- 1134US2012223414A1Methods for increasing bottom electrode performance in carbon-based memory devicesSCHRICKER APRIL D·Filed 2011·Application pending·0 cites
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