Assignee
SEKI AKINORI
JP·4 granted patents·1 pending application·2 citations·filing 2006–2010
Top patents by PatentIndex Score
5 records- 0162US8716121B2Ohmic electrode and method of forming the sameSEKI AKINORI·Filed 2010·Granted May 6, 2014·2 cites·2 claims
- 0257US8470698B2Method for growing p-type SiC semiconductor single crystal and p-type SiC semiconductor single crystalSEKI AKINORI·Filed 2009·Granted Jun 25, 2013·0 cites·15 claims
- 0341US8338833B2Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the sameSEKI AKINORI·Filed 2006·Granted Dec 25, 2012·0 cites·14 claims
- 0438US9157171B2Production method of n-type SiC single crystal, n-type SiC single crystal obtained thereby and application of sameSEKI AKINORI·Filed 2010·Granted Oct 13, 2015·0 cites·9 claims
- 0533US2011287626A1Ohmic electrode and method of forming the sameSEKI AKINORI·Filed 2010·Application pending·0 cites
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