Assignee
SEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION
CN·43 granted patents·2 pending applications·52 citations·filing 2013–2020
Top patents by PatentIndex Score
45 records- 0188US9835956B2Apparatus and method for overlay measurementSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Dec 5, 2017·4 cites·17 claims
- 0288US9825022B2ESD clamp circuitSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2015·Granted Nov 21, 2017·8 cites·14 claims
- 0387US9876003B2Electrostatic discharge protection circuit and configuration methodSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2015·Granted Jan 23, 2018·6 cites·18 claims
- 0486US9876079B2Nanowire device and method of manufacturing the sameSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2017·Granted Jan 23, 2018·3 cites·7 claims
- 0583US9830996B2Efuse bit cell, and read/write method thereof, and efuse arraySEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Nov 28, 2017·7 cites·20 claims
- 0681US9853026B2FinFET device and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2014·Granted Dec 26, 2017·4 cites·20 claims
- 0780US9882030B2Method to enhance FinFET device performance with channel stop layer depth controlSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Jan 30, 2018·2 cites·7 claims
- 0877US9853030B2Fin field effect transistorSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Dec 26, 2017·2 cites·9 claims
- 0976US10741453B2FinFET deviceSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2019·Granted Aug 11, 2020·1 cites·18 claims
- 1075US10741651B2IGBT with improved terminal and manufacturing method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2018·Granted Aug 11, 2020·2 cites·17 claims
- 1174US9875965B2Semiconductor deviceSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Jan 23, 2018·2 cites·15 claims
- 1274US9824928B2Semiconductor device, related manufacturing method, and related electronic deviceSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2014·Granted Nov 21, 2017·3 cites·6 claims
- 1372US9837323B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Dec 5, 2017·2 cites·19 claims
- 1471US10755937B2Vertical transistor having a silicided bottom and method for fabricating thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2018·Granted Aug 25, 2020·1 cites·16 claims
- 1571US10741563B2Dynamic random access memorySEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2019·Granted Aug 11, 2020·1 cites·10 claims
- 1667US9875944B2Method to improve HCI performance for FinFETSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Jan 23, 2018·1 cites·20 claims
- 1763US9824918B2Method for electromigration and adhesion using two selective depositionSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2013·Granted Nov 21, 2017·1 cites·19 claims
- 1860US10748997B2Tunnel field-effect transistorSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2019·Granted Aug 18, 2020·0 cites·8 claims
- 1960US9871120B2Fin field-effect transistor and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2015·Granted Jan 16, 2018·1 cites·17 claims
- 2055US10741670B2Semiconductor structures and fabrication methods thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2018·Granted Aug 11, 2020·0 cites·12 claims
- 2154US9823267B2Accelerometer with little cross effectSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2015·Granted Nov 21, 2017·1 cites·11 claims
- 2253US10741689B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2018·Granted Aug 11, 2020·0 cites·16 claims
- 2353US9875908B2LDMOS deviceSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2017·Granted Jan 23, 2018·0 cites·12 claims
- 2451US9829788B2Photolithographic mask and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2015·Granted Nov 28, 2017·0 cites·15 claims
- 2550US9870916B2LDMOS transistorSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2017·Granted Jan 16, 2018·0 cites·14 claims
- 2650US2017358676A1Semiconductor deviceSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2017·Application pending·0 cites
- 2748US10748817B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2018·Granted Aug 18, 2020·0 cites·19 claims
- 2848US9824914B2Method for manufacturing a device isolation structureSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2017·Granted Nov 21, 2017·0 cites·6 claims
- 2947US10748814B2Fabrication method of semiconductor device by removing sacrificial layer on gate structuresSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2018·Granted Aug 18, 2020·0 cites·21 claims
- 3046US9859372B2Semiconductor device, related manufacturing method, and related electronic deviceSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Jan 2, 2018·0 cites·8 claims
- 3145US9837287B2Sealing structure for a bonded wafer and method of forming the sealing structureSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2017·Granted Dec 5, 2017·0 cites·11 claims
- 3244US2020251379A1Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2020·Application pending·0 cites
- 3342US10755935B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2018·Granted Aug 25, 2020·0 cites·19 claims
- 3442US10748816B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2017·Granted Aug 18, 2020·0 cites·14 claims
- 3542US9865505B2Method for reducing N-type FinFET source and drain resistanceSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Jan 9, 2018·0 cites·20 claims
- 3642US9852943B2Method for manufacturing a conductor to be used as interconnect memberSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Dec 26, 2017·0 cites·20 claims
- 3742US9825133B2Semiconductor device and related manufacturing methodSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Nov 21, 2017·0 cites·20 claims
- 3841US10741610B2Memory cells and memory array structures including RRAM, and fabrication methods thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2018·Granted Aug 11, 2020·0 cites·20 claims
- 3941US9852991B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Dec 26, 2017·0 cites·18 claims
- 4041US9837311B2Conductive plug structure and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Dec 5, 2017·0 cites·20 claims
- 4139US9871031B2Semiconductor device and an electronic apparatusSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2015·Granted Jan 16, 2018·0 cites·13 claims
- 4239US9825091B2Memory cell structuresSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Nov 21, 2017·0 cites·20 claims
- 4337US9864388B2Reference voltage generator and related methodSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Jan 9, 2018·0 cites·15 claims
- 4435US9831879B2Low core power leakage structure in IO receiver during IO power downSEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2017·Granted Nov 28, 2017·0 cites·11 claims
- 4532US9830978B2Write-tracking circuit for memorySEMICONDUCTOR MFG INTERNATIONAL (SHANGHAI) CORPORATION·Filed 2016·Granted Nov 28, 2017·0 cites·20 claims
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