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SEOUL UNIV R&DB FOUNDATION

KR·1 granted patent·0 citations·filing 2019–2019

Technology mixH01L1 H10N1

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0141US11437574B2Non-volatile resistive-switching memory containing halide perovskite material and method for fabricating the sameSEOUL UNIV R&DB FOUNDATION·Filed 2019·Granted Sep 6, 2022·0 cites·8 claims

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