Assignee
SHEPPARD SCOTT T
US·5 granted patents·47 citations·filing 2006–2011
Top patents by PatentIndex Score
5 records- 0193US8823057B2Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devicesSHEPPARD SCOTT T·Filed 2006·Granted Sep 2, 2014·23 cites·43 claims
- 0285US9711633B2Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ionsSHEPPARD SCOTT T·Filed 2008·Granted Jul 18, 2017·15 cites·24 claims
- 0385US9318594B2Semiconductor devices including implanted regions and protective layersSHEPPARD SCOTT T·Filed 2008·Granted Apr 19, 2016·8 cites·26 claims
- 0459US8502235B2Integrated nitride and silicon carbide-based devicesSHEPPARD SCOTT T·Filed 2011·Granted Aug 6, 2013·1 cites·7 claims
- 0551US11316028B2Nitride-based transistors with a protective layer and a low-damage recessSHEPPARD SCOTT T·Filed 2011·Granted Apr 26, 2022·0 cites·17 claims
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