Assignee
SHINETSU HANDOTAI KK
JP·945 granted patents·148 pending applications·17,584 citations·filing 1983–2022
Top patents by PatentIndex Score
1,093 records- 0199US7393207B2Wafer support tool for heat treatment and heat treatment apparatusSHINETSU HANDOTAI KK·Filed 2004·Granted Jul 1, 2008·486 cites·15 claims
- 0299US6372609B1Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the methodSHINETSU HANDOTAI KK·Filed 1999·Granted Apr 16, 2002·512 cites·16 claims
- 0397US6569239B2Silicon epitaxial wafer and production method thereforSHINETSU HANDOTAI KK·Filed 2001·Granted May 27, 2003·550 cites·8 claims
- 0497US6245647B1Method for fabrication of thin filmSHINETSU HANDOTAI KK·Filed 1999·Granted Jun 12, 2001·287 cites·10 claims
- 0597US5968264AMethod and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the sameSHINETSU HANDOTAI KK·Filed 1998·Granted Oct 19, 1999·106 cites·13 claims
- 0696US6814811B2Semiconductor wafer and vapor phase growth apparatusSHINETSU HANDOTAI KK·Filed 2002·Granted Nov 9, 2004·279 cites·3 claims
- 0796US5584746AMethod of polishing semiconductor wafers and apparatus thereforSHINETSU HANDOTAI KK·Filed 1994·Granted Dec 17, 1996·136 cites·18 claims
- 0896US5152857AMethod for preparing a substrate for semiconductor devicesSHINETSU HANDOTAI KK·Filed 1991·Granted Oct 6, 1992·345 cites·3 claims
- 0996US5081795APolishing apparatusSHINETSU HANDOTAI KK·Filed 1991·Granted Jan 21, 1992·177 cites·10 claims
- 1095US6596610B1Method for reclaiming delaminated wafer and reclaimed delaminated waferSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 22, 2003·108 cites·1 claims
- 1195US4935046AManufacture of a quartz glass vessel for the growth of single crystal semiconductorSHINETSU HANDOTAI KK·Filed 1988·Granted Jun 19, 1990·91 cites·10 claims
- 1294US6544656B1Production method for silicon wafer and silicon waferSHINETSU HANDOTAI KK·Filed 2000·Granted Apr 8, 2003·127 cites·24 claims
- 1394US5942445AMethod of manufacturing semiconductor wafersSHINETSU HANDOTAI KK·Filed 1997·Granted Aug 24, 1999·163 cites·20 claims
- 1493US9885122B2Method of manufacturing silicon single crystalSHINETSU HANDOTAI KK·Filed 2013·Granted Feb 6, 2018·6 cites·8 claims
- 1593US7355114B2Solar cell and its manufacturing methodSHINETSU HANDOTAI KK·Filed 2002·Granted Apr 8, 2008·57 cites·15 claims
- 1693US6884154B2Method for apparatus for polishing outer peripheral chamfered part of waferSHINETSU HANDOTAI KK·Filed 2001·Granted Apr 26, 2005·130 cites·11 claims
- 1793US5749974AMethod of chemical vapor deposition and reactor thereforSHINETSU HANDOTAI KK·Filed 1995·Granted May 12, 1998·101 cites·4 claims
- 1893US5718620APolishing machine and method of dissipating heat therefromSHINETSU HANDOTAI KK·Filed 1994·Granted Feb 17, 1998·72 cites·7 claims
- 1993US5117590AMethod of automatically chamfering a wafer and apparatus thereforSHINETSU HANDOTAI KK·Filed 1989·Granted Jun 2, 1992·53 cites·20 claims
- 2092US6589447B1Compound semiconductor single crystal and fabrication process for compound semiconductor deviceSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 8, 2003·93 cites·10 claims
- 2192US6261361B1Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing itSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 17, 2001·34 cites·10 claims
- 2292US6221814B1Aqueous compositions, aqueous cutting fluid using the same, method for preparation thereof, and cutting method using the cutting fluidSHINETSU HANDOTAI KK·Filed 1999·Granted Apr 24, 2001·106 cites·10 claims
- 2392US4956208AManufacture of a quartz glass vessel for the growth of single crystal semiconductorSHINETSU HANDOTAI KK·Filed 1989·Granted Sep 11, 1990·79 cites·4 claims
- 2491US7727860B2Method for manufacturing bonded wafer and outer-peripheral grinding machine of bonded waferSHINETSU HANDOTAI KK·Filed 2006·Granted Jun 1, 2010·21 cites·22 claims
- 2591US7315064B2Bonded wafer and method of producing bonded waferSHINETSU HANDOTAI KK·Filed 2005·Granted Jan 1, 2008·20 cites·5 claims
- 2691US6958094B2Single crystal cutting methodSHINETSU HANDOTAI KK·Filed 2001·Granted Oct 25, 2005·56 cites·12 claims
- 2791US6770507B2Semiconductor wafer and method for producing the sameSHINETSU HANDOTAI KK·Filed 2001·Granted Aug 3, 2004·59 cites·5 claims
- 2891US6140210AMethod of fabricating an SOI wafer and SOI wafer fabricated therebySHINETSU HANDOTAI KK·Filed 1998·Granted Oct 31, 2000·111 cites·8 claims
- 2990US9266216B2Polishing head and polishing apparatusSHINETSU HANDOTAI KK·Filed 2013·Granted Feb 23, 2016·10 cites·15 claims
- 3090US7484958B2Vertical boat for heat treatment and method for producing the sameSHINETSU HANDOTAI KK·Filed 2004·Granted Feb 3, 2009·48 cites·8 claims
- 3190US6680260B2Method of producing a bonded wafer and the bonded waferSHINETSU HANDOTAI KK·Filed 2002·Granted Jan 20, 2004·53 cites·28 claims
- 3290US5704973AApparatus and method for the uniform distribution of crystal defects upon a silicon single crystalSHINETSU HANDOTAI KK·Filed 1996·Granted Jan 6, 1998·68 cites·7 claims
- 3390US5514025AApparatus and method for chamfering the peripheral edge of a wafer to specular finishSHINETSU HANDOTAI KK·Filed 1993·Granted May 7, 1996·60 cites·11 claims
- 3490US5485021ASemiconductor device with optical waveguides to achieve signal transmission using optical meansSHINETSU HANDOTAI KK·Filed 1994·Granted Jan 16, 1996·103 cites·14 claims
- 3589US9728442B2Workpiece holding apparatusSHINETSU HANDOTAI KK·Filed 2015·Granted Aug 8, 2017·9 cites·2 claims
- 3689US7052974B2Bonded wafer and method of producing bonded waferSHINETSU HANDOTAI KK·Filed 2002·Granted May 30, 2006·47 cites·16 claims
- 3789US6234879B1Method and apparatus for wafer chamfer polishingSHINETSU HANDOTAI KK·Filed 1996·Granted May 22, 2001·76 cites·1 claims
- 3889US5879220AApparatus for mirror-polishing thin plateSHINETSU HANDOTAI KK·Filed 1997·Granted Mar 9, 1999·80 cites·3 claims
- 3989US5667584AMethod for the preparation of a single crystal of silicon with decreased crystal defectsSHINETSU HANDOTAI KK·Filed 1995·Granted Sep 16, 1997·64 cites·1 claims
- 4088US10400353B2Method for controlling resistivity and N-type silicon single crystalSHINETSU HANDOTAI KK·Filed 2015·Granted Sep 3, 2019·2 cites·6 claims
- 4188US10233565B2Single-crystal manufacturing apparatus and method for controlling melt surface positionSHINETSU HANDOTAI KK·Filed 2016·Granted Mar 19, 2019·2 cites·4 claims
- 4288US7959491B2Method for slicing workpiece by using wire saw and wire sawSHINETSU HANDOTAI KK·Filed 2008·Granted Jun 14, 2011·10 cites·8 claims
- 4388US7029013B2Seal member, and substrate storage container using the sameSHINETSU HANDOTAI KK·Filed 2001·Granted Apr 18, 2006·49 cites·6 claims
- 4488US6846718B1Method for producing SOI wafer and SOI waferSHINETSU HANDOTAI KK·Filed 2000·Granted Jan 25, 2005·42 cites·3 claims
- 4588US6843847B1Silicon single crystal wafer and production method thereof and soi waferSHINETSU HANDOTAI KK·Filed 2000·Granted Jan 18, 2005·38 cites·21 claims
- 4688US6652358B1Double-sided simultaneous grinding method, double-sided simultaneous grinding machine, double-sided simultaneous lapping method, and double-sided simultaneous lapping machineSHINETSU HANDOTAI KK·Filed 2000·Granted Nov 25, 2003·39 cites·22 claims
- 4788US6284629B1Method of fabricating an SOI wafer and SOI wafer fabricated by the methodSHINETSU HANDOTAI KK·Filed 1999·Granted Sep 4, 2001·78 cites·11 claims
- 4888US6245645B1Method of fabricating an SOI waferSHINETSU HANDOTAI KK·Filed 1999·Granted Jun 12, 2001·80 cites·16 claims
- 4988US6191009B1Method for producing silicon single crystal wafer and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Feb 20, 2001·57 cites·19 claims
- 5088US5269285AWire saw and slicing method using the sameSHINETSU HANDOTAI KK·Filed 1992·Granted Dec 14, 1993·64 cites·3 claims
Showing the top 50 of 1,093 patent records by PatentIndex Score.
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