Assignee
SICRYSTAL GMBH
DE10 patents
Top patents by PatentIndex Score
US11236438B2Feb 1, 2022
Silicon carbide substrate and method of growing SiC single crystal boules
SICRYSTAL GMBH4 citations70
US12460314B2Nov 4, 2025
Silicon carbide substrate and method of growing SiC single crystal boules
SICRYSTAL GMBH0 citations59
US11781245B2Oct 10, 2023
Silicon carbide substrate and method of growing SiC single crystal boules
SICRYSTAL GMBH0 citations59
US11624124B2Apr 11, 2023
Silicon carbide substrate and method of growing SiC single crystal boules
SICRYSTAL GMBH1 citations59
US11041254B2Jun 22, 2021
Chamfered silicon carbide substrate and method of chamfering
SICRYSTAL GMBH1 citations59
US12157955B2Dec 3, 2024
Method for simultaneously manufacturing more than one single crystal of a semiconductor material by physical vapor transport
SICRYSTAL GMBH0 citations58
US11560643B2Jan 24, 2023
System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport
SICRYSTAL GMBH0 citations58
US11515140B2Nov 29, 2022
Chamfered silicon carbide substrate and method of chamfering
SICRYSTAL GMBH0 citations49
US11479875B2Oct 25, 2022
System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport
SICRYSTAL GMBH0 citations47
US12195878B2Jan 14, 2025
SiC crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same
SICRYSTAL GMBH0 citations41