Assignee

SII SEMICONDUTOR CORP

JP·1 granted patent·3 citations·filing 2017–2017

Technology mixG01R1 H01L1 H10B1 H10N1

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0178US10290677B2Semiconductor device having hall elements formed in a semiconductor substrate and a magnetic body flux concentratorSII SEMICONDUTOR CORP·Filed 2017·Granted May 14, 2019·3 cites·5 claims

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