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SILICON WIRELESS CORP
US2 patents
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US6525372B2Feb 25, 2003
Vertical power devices having insulated source electrodes in discontinuous deep trenches
SILICON WIRELESS CORP100 citations98
US6545316B1Apr 8, 2003
MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same
SILICON WIRELESS CORP104 citations97