Assignee
SILICONIX INC
US249 patents
Top patents by PatentIndex Score
US6285060B1Sep 4, 2001
Barrier accumulation-mode MOSFET
SILICONIX INC173 citations99
US6084264AJul 4, 2000
Trench MOSFET having improved breakdown and on-resistance characteristics
SILICONIX INC209 citations99
US6069043AMay 30, 2000
Method of making punch-through field effect transistor
SILICONIX INC127 citations99
US6046470AApr 4, 2000
Trench-gated MOSFET with integral temperature detection diode
SILICONIX INC219 citations99
US5973367AOct 26, 1999
Multiple gated MOSFET for use in DC-DC converter
SILICONIX INC189 citations99
US5929690AJul 27, 1999
Three-terminal power MOSFET switch for use as synchronous rectifier or voltage clamp
SILICONIX INC126 citations99
US5895952AApr 20, 1999
Trench MOSFET with multi-resistivity drain to provide low on-resistance
SILICONIX INC162 citations99
US5814858ASep 29, 1998
Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer
SILICONIX INC236 citations99
US5767578AJun 16, 1998
Surface mount and flip chip technology with diamond film passivation for total integated circuit isolation
SILICONIX INC176 citations99
US5757081AMay 26, 1998
Surface mount and flip chip technology for total integrated circuit isolation
SILICONIX INC224 citations99
US5753529AMay 19, 1998
Surface mount and flip chip technology for total integrated circuit isolation
SILICONIX INC183 citations99
US5744994AApr 28, 1998
Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp
SILICONIX INC133 citations99
US5689128ANov 18, 1997
High density trenched DMOS transistor
SILICONIX INC242 citations99
US5689144ANov 18, 1997
Four-terminal power MOSFET switch having reduced threshold voltage and on-resistance
SILICONIX INC178 citations99
US5639676AJun 17, 1997
Trenched DMOS transistor fabrication having thick termination region oxide
SILICONIX INC138 citations99
US5614751AMar 25, 1997
Edge termination structure for power MOSFET
SILICONIX INC134 citations99
US5605852AFeb 25, 1997
Method for fabricating high voltage transistor having trenched termination
SILICONIX INC199 citations99
US5597765AJan 28, 1997
Method for making termination structure for power MOSFET
SILICONIX INC233 citations99
US5592005AJan 7, 1997
Punch-through field effect transistor
SILICONIX INC171 citations99
US5578851ANov 26, 1996
Trenched DMOS transistor having thick field oxide in termination region
SILICONIX INC136 citations99
US5576245ANov 19, 1996
Method of making vertical current flow field effect transistor
SILICONIX INC109 citations99
US5514608AMay 7, 1996
Method of making lightly-doped drain DMOS with improved breakdown characteristics
SILICONIX INC150 citations99
US5485027AJan 16, 1996
Isolated DMOS IC technology
SILICONIX INC222 citations99
US5430324AJul 4, 1995
High voltage transistor having edge termination utilizing trench technology
SILICONIX INC184 citations99
US5426328AJun 20, 1995
BICDMOS structures
SILICONIX INC143 citations99
US5386136AJan 31, 1995
Lightly-doped drain MOSFET with improved breakdown characteristics
SILICONIX INC238 citations99
US5374569ADec 20, 1994
Method for forming a BiCDMOS
SILICONIX INC119 citations99
US5298781AMar 29, 1994
Vertical current flow field effect transistor with thick insulator over non-channel areas
SILICONIX INC144 citations99
US5168331ADec 1, 1992
Power metal-oxide-semiconductor field effect transistor
SILICONIX INC236 citations99
US5164325ANov 17, 1992
Method of making a vertical current flow field effect transistor
SILICONIX INC144 citations99
US5156989AOct 20, 1992
Complementary, isolated DMOS IC technology
SILICONIX INC405 citations99
US4914058AApr 3, 1990
Grooved DMOS process with varying gate dielectric thickness
SILICONIX INC352 citations99
US4893160AJan 9, 1990
Method for increasing the performance of trenched devices and the resulting structure
SILICONIX INC423 citations99
US4811065AMar 7, 1989
Power DMOS transistor with high speed body diode
SILICONIX INC169 citations99
US4767722AAug 30, 1988
Method for making planar vertical channel DMOS structures
SILICONIX INC210 citations99
US7183610B2Feb 27, 2007
Super trench MOSFET including buried source electrode and method of fabricating the same
SILICONIX INC118 citations98
US6838722B2Jan 4, 2005
Structures of and methods of fabricating trench-gated MIS devices
SILICONIX INC98 citations98
US6239463B1May 29, 2001
Low resistance power MOSFET or other device containing silicon-germanium layer
SILICONIX INC305 citations98
US6204533B1Mar 20, 2001
Vertical trench-gated power MOSFET having stripe geometry and high cell density
SILICONIX INC86 citations98
US6172383B1Jan 9, 2001
Power MOSFET having voltage-clamped gate
SILICONIX INC97 citations98
US6140678AOct 31, 2000
Trench-gated power MOSFET with protective diode
SILICONIX INC92 citations98
US6096608AAug 1, 2000
Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench
SILICONIX INC105 citations98
US6066877AMay 23, 2000
Vertical power MOSFET having thick metal layer to reduce distributed resistance
SILICONIX INC113 citations98
US6060752AMay 9, 2000
Electrostatic discharge protection circuit
SILICONIX INC98 citations98
US6049108AApr 11, 2000
Trench-gated MOSFET with bidirectional voltage clamping
SILICONIX INC511 citations98
US5998836ADec 7, 1999
Trench-gated power MOSFET with protective diode
SILICONIX INC103 citations98
US5998837ADec 7, 1999
Trench-gated power MOSFET with protective diode having adjustable breakdown voltage
SILICONIX INC127 citations98
US5981344ANov 9, 1999
Trench field effect transistor with reduced punch-through susceptibility and low RDSon
SILICONIX INC117 citations98
US5917216AJun 29, 1999
Trenched field effect transistor with PN depletion barrier
SILICONIX INC164 citations98
US5909103AJun 1, 1999
Safety switch for lithium ion battery
SILICONIX INC129 citations98
Showing the top 50 of 249 patents by PatentIndex Score.