Assignee
SINHA ASHWINI K
US·7 granted patents·2 pending applications·24 citations·filing 2012–2022
Top patents by PatentIndex Score
9 records- 0189US9548181B2Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantationSINHA ASHWINI K·Filed 2015·Granted Jan 17, 2017·5 cites·25 claims
- 0288US9165773B2Aluminum dopant compositions, delivery package and method of useSINHA ASHWINI K·Filed 2014·Granted Oct 20, 2015·9 cites·17 claims
- 0379US8803112B2Silicon-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during silicon ion implantationSINHA ASHWINI K·Filed 2013·Granted Aug 12, 2014·4 cites·20 claims
- 0470US8883620B1Methods for using isotopically enriched levels of dopant gas compositions in an ion implantation processSINHA ASHWINI K·Filed 2013·Granted Nov 11, 2014·2 cites·20 claims
- 0569US9552990B2Storage and sub-atmospheric delivery of dopant compositions for carbon ion implantationSINHA ASHWINI K·Filed 2013·Granted Jan 24, 2017·2 cites·21 claims
- 0668US9570271B2Boron-containing dopant compositions, systems and methods of use thereof for improving ion beam current and performance during boron ion implantationSINHA ASHWINI K·Filed 2015·Granted Feb 14, 2017·1 cites·18 claims
- 0763US8603363B1Compositions for extending ion source life and improving ion source performance during carbon implantationSINHA ASHWINI K·Filed 2012·Granted Dec 10, 2013·1 cites·15 claims
- 0846US2022260212A1Acetylene fluid supply package, system comprising the same and method of fabricating semiconductor device using the sameSINHA ASHWINI K·Filed 2022·Application pending·0 cites
- 0939US2013341761A1Methods for extending ion source life and improving ion source performance during carbon implantationSINHA ASHWINI K·Filed 2012·Application pending·0 cites
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