Assignee
SMITH RICHARD PETER
US·2 granted patents·6 citations·filing 2008–2012
Technology mixH10D2
Top patents by PatentIndex Score
2 records- 0176US8212289B2Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditionsSMITH RICHARD PETER·Filed 2008·Granted Jul 3, 2012·5 cites·20 claims
- 0264US8803198B2Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditionsSMITH RICHARD PETER·Filed 2012·Granted Aug 12, 2014·1 cites·23 claims
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