Assignee
SPIN TRANSFER TECH INC
US·45 granted patents·4 pending applications·677 citations·filing 2015–2019
Top patents by PatentIndex Score
49 records- 0199US9853206B2Precessional spin current structure for MRAMSPIN TRANSFER TECH INC·Filed 2015·Granted Dec 26, 2017·88 cites·17 claims
- 0299US9728712B2Spin transfer torque structure for MRAM devices having a spin current injection capping layerSPIN TRANSFER TECH INC·Filed 2015·Granted Aug 8, 2017·72 cites·28 claims
- 0399US9406876B2Method for manufacturing MTJ memory deviceSPIN TRANSFER TECH INC·Filed 2016·Granted Aug 2, 2016·100 cites·21 claims
- 0498US10115446B1Spin transfer torque MRAM device with error bufferSPIN TRANSFER TECH INC·Filed 2016·Granted Oct 30, 2018·53 cites·22 claims
- 0598US10032978B1MRAM with reduced stray magnetic fieldsSPIN TRANSFER TECH INC·Filed 2017·Granted Jul 24, 2018·33 cites·34 claims
- 0697US10163479B2Method and apparatus for bipolar memory write-verifySPIN TRANSFER TECH INC·Filed 2016·Granted Dec 25, 2018·50 cites·23 claims
- 0797US10026892B2Precessional spin current structure for MRAMSPIN TRANSFER TECH INC·Filed 2017·Granted Jul 17, 2018·27 cites·16 claims
- 0897US9741926B1Memory cell having magnetic tunnel junction and thermal stability enhancement layerSPIN TRANSFER TECH INC·Filed 2016·Granted Aug 22, 2017·89 cites·22 claims
- 0996US9773974B2Polishing stop layer(s) for processing arrays of semiconductor elementsSPIN TRANSFER TECH INC·Filed 2016·Granted Sep 26, 2017·71 cites·20 claims
- 1095US10199083B1Three-terminal MRAM with ac write-assist for low read disturbSPIN TRANSFER TECH INC·Filed 2017·Granted Feb 5, 2019·13 cites·33 claims
- 1192US10236075B1Predicting tunnel barrier endurance using redundant memory structuresSPIN TRANSFER TECH INC·Filed 2017·Granted Mar 19, 2019·12 cites·20 claims
- 1291US10388860B2Method for manufacturing high density magnetic random access memory devices using diamond like carbon hard maskSPIN TRANSFER TECH INC·Filed 2017·Granted Aug 20, 2019·5 cites·18 claims
- 1391US10186308B1Magnetic random access memory having improved reliability through thermal claddingSPIN TRANSFER TECH INC·Filed 2018·Granted Jan 22, 2019·15 cites·20 claims
- 1489US10186551B1Buried tap for a vertical transistor used with a perpendicular magnetic tunnel junction (PMTJ)SPIN TRANSFER TECH INC·Filed 2018·Granted Jan 22, 2019·6 cites·14 claims
- 1585US10460781B2Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bankSPIN TRANSFER TECH INC·Filed 2017·Granted Oct 29, 2019·6 cites·17 claims
- 1684US10347314B2Method and apparatus for bipolar memory write-verifySPIN TRANSFER TECH INC·Filed 2017·Granted Jul 9, 2019·6 cites·21 claims
- 1784US10141499B1Perpendicular magnetic tunnel junction device with offset precessional spin current layerSPIN TRANSFER TECH INC·Filed 2017·Granted Nov 27, 2018·2 cites·15 claims
- 1882US10147872B2Spin transfer torque structure for MRAM devices having a spin current injection capping layerSPIN TRANSFER TECH INC·Filed 2017·Granted Dec 4, 2018·4 cites·23 claims
- 1981US10367139B2Methods of manufacturing magnetic tunnel junction devicesSPIN TRANSFER TECH INC·Filed 2017·Granted Jul 30, 2019·3 cites·25 claims
- 2078US10211395B1Method for combining NVM class and SRAM class MRAM elements on the same chipSPIN TRANSFER TECH INC·Filed 2017·Granted Feb 19, 2019·4 cites·18 claims
- 2176US10424723B2Magnetic tunnel junction devices including an optimization layerSPIN TRANSFER TECH INC·Filed 2017·Granted Sep 24, 2019·2 cites·19 claims
- 2275US10879454B2Magnetic tunnel junction memory element with improved reference layer stability for magnetic random access memory applicationSPIN TRANSFER TECH INC·Filed 2018·Granted Dec 29, 2020·1 cites·20 claims
- 2373US10411185B1Process for creating a high density magnetic tunnel junction array test platformSPIN TRANSFER TECH INC·Filed 2018·Granted Sep 10, 2019·1 cites·20 claims
- 2473US10395711B2Perpendicular source and bit lines for an MRAM arraySPIN TRANSFER TECH INC·Filed 2017·Granted Aug 27, 2019·3 cites·11 claims
- 2567US10446210B2Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registersSPIN TRANSFER TECH INC·Filed 2017·Granted Oct 15, 2019·2 cites·20 claims
- 2667US10437723B2Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory deviceSPIN TRANSFER TECH INC·Filed 2017·Granted Oct 8, 2019·2 cites·20 claims
- 2764US10438995B2Devices including magnetic tunnel junctions integrated with selectorsSPIN TRANSFER TECH INC·Filed 2018·Granted Oct 8, 2019·2 cites·21 claims
- 2863US10366775B2Memory device using levels of dynamic redundancy registers for writing a data word that failed a write operationSPIN TRANSFER TECH INC·Filed 2017·Granted Jul 30, 2019·1 cites·24 claims
- 2961US10489245B2Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct themSPIN TRANSFER TECH INC·Filed 2017·Granted Nov 26, 2019·1 cites·20 claims
- 3061US10360962B1Memory array with individually trimmable sense amplifiersSPIN TRANSFER TECH INC·Filed 2017·Granted Jul 23, 2019·1 cites·15 claims
- 3160US10192602B2Smart cache design to prevent overflow for a memory device with a dynamic redundancy registerSPIN TRANSFER TECH INC·Filed 2017·Granted Jan 29, 2019·1 cites·23 claims
- 3259US10192601B2Memory instruction pipeline with an additional write stage in a memory device that uses dynamic redundancy registersSPIN TRANSFER TECH INC·Filed 2017·Granted Jan 29, 2019·1 cites·21 claims
- 3353US10446744B2Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the sameSPIN TRANSFER TECH INC·Filed 2018·Granted Oct 15, 2019·0 cites·22 claims
- 3452US10437491B2Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy registerSPIN TRANSFER TECH INC·Filed 2017·Granted Oct 8, 2019·0 cites·20 claims
- 3551US10424393B2Method of reading data from a memory device using multiple levels of dynamic redundancy registersSPIN TRANSFER TECH INC·Filed 2017·Granted Sep 24, 2019·0 cites·25 claims
- 3649US10424726B2Process for improving photoresist pillar adhesion during MRAM fabricationSPIN TRANSFER TECH INC·Filed 2017·Granted Sep 24, 2019·0 cites·20 claims
- 3748US10438996B2Methods of fabricating magnetic tunnel junctions integrated with selectorsSPIN TRANSFER TECH INC·Filed 2018·Granted Oct 8, 2019·0 cites·21 claims
- 3848US10366774B2Device with dynamic redundancy registersSPIN TRANSFER TECH INC·Filed 2016·Granted Jul 30, 2019·0 cites·24 claims
- 3947US2019237664A1Perpendicular Magnetic Anisotropy Interface Tunnel Junction DevicesSPIN TRANSFER TECH INC·Filed 2019·Application pending·0 cites
- 4046US10388861B1Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the sameSPIN TRANSFER TECH INC·Filed 2018·Granted Aug 20, 2019·0 cites·26 claims
- 4144US10971681B2Method for manufacturing a data recording system utilizing heterogeneous magnetic tunnel junction types in a single chipSPIN TRANSFER TECH INC·Filed 2018·Granted Apr 6, 2021·0 cites·12 claims
- 4240US10628316B2Memory device with a plurality of memory banks where each memory bank is associated with a corresponding memory instruction pipeline and a dynamic redundancy registerSPIN TRANSFER TECH INC·Filed 2017·Granted Apr 21, 2020·0 cites·17 claims
- 4340US10481976B2Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiersSPIN TRANSFER TECH INC·Filed 2017·Granted Nov 19, 2019·0 cites·24 claims
- 4440US10395712B2Memory array with horizontal source line and sacrificial bitline per virtual sourceSPIN TRANSFER TECH INC·Filed 2017·Granted Aug 27, 2019·0 cites·20 claims
- 4539US2016218278A1Magnetic tunnel junction structure for mram deviceSPIN TRANSFER TECH INC·Filed 2016·Application pending·0 cites
- 4638US10360964B2Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory deviceSPIN TRANSFER TECH INC·Filed 2017·Granted Jul 23, 2019·0 cites·20 claims
- 4737US2019295618A1Magnetic Tunnel Junction Devices Including an Annular Free Magnetic Layer and a Planar Reference Magnetic LayerSPIN TRANSFER TECH INC·Filed 2018·Application pending·0 cites
- 4837US2019207101A1Photolithographic method for fabricating dense pillar arrays using spacers as a patternSPIN TRANSFER TECH INC·Filed 2017·Application pending·0 cites
- 4935US10720573B2Method for manufacturing magnetic tunnel junction pillars using photolithographically directed block copolymer self-assembly and organometallic gas infusionSPIN TRANSFER TECH INC·Filed 2017·Granted Jul 21, 2020·0 cites·15 claims
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