Assignee
STORCK PETER
DE3 patents
Top patents by PatentIndex Score
US8093143B2Jan 10, 2012
Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side
STORCK PETER4 citations59
US10192739B2Jan 29, 2019
Layered semiconductor substrate with reduced bow having a group III nitride layer and method for manufacturing it
STORCK PETER1 citations52
US8115195B2Feb 14, 2012
Semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer
STORCK PETER1 citations45