Assignee
STRAUBINGER THOMAS
DE3 patents
Top patents by PatentIndex Score
US8865324B2Oct 21, 2014
Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution
STRAUBINGER THOMAS34 citations90
US8747982B2Jun 10, 2014
Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course
STRAUBINGER THOMAS10 citations80
US8758510B2Jun 24, 2014
Production method for an SiC volume monocrystal with a non-homogeneous lattice plane course and a monocrystalline SiC substrate with a non-homogeneous lattice plane course
STRAUBINGER THOMAS1 citations48