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SUN SHAN
US4 patents
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US8916434B2Dec 23, 2014
Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process
SUN SHAN6 citations82
US8552515B2Oct 8, 2013
Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) device structure employing reduced processing steps
SUN SHAN5 citations71
US8518792B2Aug 27, 2013
Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) having a ferroelectric capacitor aligned with a three dimensional transistor structure
SUN SHAN5 citations71
US8518791B2Aug 27, 2013
Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) with simultaneous formation of sidewall ferroelectric capacitors
SUN SHAN0 citations50