Assignee
TAI SUNG-SHAN
US·9 granted patents·76 citations·filing 2007–2013
Top patents by PatentIndex Score
9 records- 0196US8394702B2Method for making dual gate oxide trench MOSFET with channel stop using three or four masks processTAI SUNG-SHAN·Filed 2010·Granted Mar 12, 2013·22 cites·15 claims
- 0295US8907416B2Dual gate oxide trench MOSFET with channel stop trenchTAI SUNG-SHAN·Filed 2013·Granted Dec 9, 2014·17 cites·20 claims
- 0392US8334566B2Semiconductor power device having shielding electrode for improving breakdown voltageTAI SUNG-SHAN·Filed 2010·Granted Dec 18, 2012·16 cites·8 claims
- 0490US8187939B2Direct contact in trench with three-mask shield gate processTAI SUNG-SHAN·Filed 2009·Granted May 29, 2012·15 cites·33 claims
- 0577US8058687B2Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFETTAI SUNG-SHAN·Filed 2007·Granted Nov 15, 2011·6 cites·14 claims
- 0649US8847306B2Direct contact in trench with three-mask shield gate processTAI SUNG-SHAN·Filed 2012·Granted Sep 30, 2014·0 cites·13 claims
- 0749US8524558B2Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFETTAI SUNG-SHAN·Filed 2011·Granted Sep 3, 2013·0 cites·9 claims
- 0839US8643094B2Method of forming a self-aligned contact opening in MOSFETTAI SUNG-SHAN·Filed 2011·Granted Feb 4, 2014·0 cites·11 claims
- 0930US8709895B2Manufacturing method power semiconductor deviceTAI SUNG-SHAN·Filed 2011·Granted Apr 29, 2014·0 cites·13 claims
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