Assignee
TAKAHATA MASAHIRO
JP4 patents
Top patents by PatentIndex Score
US10041155B2Aug 7, 2018
High-purity yttrium, process of producing high-purity yttrium, high-purity yttrium sputtering target, metal gate film deposited with high-purity yttrium sputtering target, and semiconductor element and device equipped with the metal gate film
TAKAHATA MASAHIRO0 citations49
US8980169B2Mar 17, 2015
High-purity lanthanum, sputtering target comprising high-purity lanthanum, and metal gate film mainly comprising high-purity lanthanum
TAKAHATA MASAHIRO1 citations48
US9013009B2Apr 21, 2015
Method for producing high-purity lanthanum, high-purity lanthanum, sputtering target formed from high-purity lanthanum, and metal gate film having highy-purity lanthanum as main component
TAKAHATA MASAHIRO1 citations45
US9234257B2Jan 12, 2016
Production method for high-purity lanthanum, high-purity lanthanum, sputtering target composed of high-purity lanthanum, and metal gate film containing high-purity lanthanum as main component
TAKAHATA MASAHIRO1 citations43