Assignee
TAMURA SEISAKUSHO KK
JP·171 granted patents·49 pending applications·785 citations·filing 1980–2025
Top patents by PatentIndex Score
220 records- 0193US10249767B2Ga2O3-based semiconductor elementTAMURA SEISAKUSHO KK·Filed 2016·Granted Apr 2, 2019·9 cites·19 claims
- 0293US9412882B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2015·Granted Aug 9, 2016·10 cites·8 claims
- 0392US9926646B2Method for growing B-Ga2O3-based single crystalTAMURA SEISAKUSHO KK·Filed 2013·Granted Mar 27, 2018·7 cites·9 claims
- 0490US10975497B2Light emitting deviceTAMURA SEISAKUSHO KK·Filed 2016·Granted Apr 13, 2021·4 cites·12 claims
- 0590US9595586B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2016·Granted Mar 14, 2017·5 cites·8 claims
- 0690US9171967B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2012·Granted Oct 27, 2015·9 cites·8 claims
- 0790US7782168B2Reactor partTAMURA SEISAKUSHO KK·Filed 2007·Granted Aug 24, 2010·17 cites·17 claims
- 0889US11335499B2ReactorTAMURA SEISAKUSHO KK·Filed 2018·Granted May 17, 2022·3 cites·8 claims
- 0989US9799440B2Coupled inductorTAMURA SEISAKUSHO KK·Filed 2014·Granted Oct 24, 2017·7 cites·8 claims
- 1089US9786433B2Reactor and manufacturing method thereofTAMURA SEISAKUSHO KK·Filed 2015·Granted Oct 10, 2017·3 cites·11 claims
- 1189US9349915B2β-Ga2O3-based single crystal substrateTAMURA SEISAKUSHO KK·Filed 2015·Granted May 24, 2016·3 cites·13 claims
- 1288US10161058B2Ga2O3-based single crystal substrate, and production method thereforTAMURA SEISAKUSHO KK·Filed 2014·Granted Dec 25, 2018·2 cites·4 claims
- 1388US7789696B2Waterproof case for electrical apparatusTAMURA SEISAKUSHO KK·Filed 2007·Granted Sep 7, 2010·65 cites·14 claims
- 1487USD267713SCombined electrical connector and adapter plug thereforTAMURA SEISAKUSHO KK·Filed 1980·Granted Jan 25, 1983·25 cites·1 claims
- 1586US11355594B2DiodeTAMURA SEISAKUSHO KK·Filed 2018·Granted Jun 7, 2022·4 cites·6 claims
- 1686US10600874B2Schottky barrier diodeTAMURA SEISAKUSHO KK·Filed 2017·Granted Mar 24, 2020·3 cites·13 claims
- 1784US10230007B2Semiconductor element, method for manufacturing same, semiconductor substrate, and crystal laminate structureTAMURA SEISAKUSHO KK·Filed 2015·Granted Mar 12, 2019·4 cites·7 claims
- 1884US10224134B2Reactor manufacturing methodTAMURA SEISAKUSHO KK·Filed 2015·Granted Mar 5, 2019·5 cites·12 claims
- 1983US9245749B2Method of forming Ga2O3-based crystal film and crystal multilayer structureTAMURA SEISAKUSHO KK·Filed 2014·Granted Jan 26, 2016·5 cites·4 claims
- 2082US11424066B2Electronic component including planar transformerTAMURA SEISAKUSHO KK·Filed 2019·Granted Aug 23, 2022·2 cites·10 claims
- 2182US9343221B2Resin-mold core and reactor using the sameTAMURA SEISAKUSHO KK·Filed 2014·Granted May 17, 2016·4 cites·11 claims
- 2282US8730000B2Reactor and manufaturing method thereofTAMURA SEISAKUSHO KK·Filed 2012·Granted May 20, 2014·4 cites·10 claims
- 2382US7375609B2Multilayer laminated circuit boardTAMURA SEISAKUSHO KK·Filed 2003·Granted May 20, 2008·33 cites·13 claims
- 2482US6742701B2Bump forming method, presoldering treatment method, soldering method, bump forming apparatus, presoldering treatment device and soldering apparatusTAMURA SEISAKUSHO KK·Filed 2002·Granted Jun 1, 2004·26 cites·31 claims
- 2581US11503725B2Driver circuit device for driving external device having semiconductor elementTAMURA SEISAKUSHO KK·Filed 2020·Granted Nov 15, 2022·2 cites·10 claims
- 2681US10429247B2ReactorTAMURA SEISAKUSHO KK·Filed 2016·Granted Oct 1, 2019·2 cites·16 claims
- 2781US4449111ATransformerTAMURA SEISAKUSHO KK·Filed 1982·Granted May 15, 1984·29 cites·4 claims
- 2880US9343223B2ReactorTAMURA SEISAKUSHO KK·Filed 2014·Granted May 17, 2016·3 cites·18 claims
- 2980US9147516B2Reactor and manufacturing method thereofTAMURA SEISAKUSHO KK·Filed 2013·Granted Sep 29, 2015·3 cites·9 claims
- 3080US7375608B2Solid electrolytic capacitor and manufacturing method thereofTAMURA SEISAKUSHO KK·Filed 2003·Granted May 20, 2008·23 cites·14 claims
- 3179US9915009B2Method for growing beta-Ga2O3-based single crystal, and beta-Ga2O3-based single crystal substrate and method for producing sameTAMURA SEISAKUSHO KK·Filed 2014·Granted Mar 13, 2018·1 cites·18 claims
- 3278US10538862B2Crystal laminate structureTAMURA SEISAKUSHO KK·Filed 2016·Granted Jan 21, 2020·2 cites·14 claims
- 3378US9431489B2β-Ga2O3-based single crystal substrateTAMURA SEISAKUSHO KK·Filed 2015·Granted Aug 30, 2016·3 cites·8 claims
- 3478US7817426B2Heatsink for heat-producing deviceTAMURA SEISAKUSHO KK·Filed 2009·Granted Oct 19, 2010·20 cites·7 claims
- 3578US7113412B2Drive circuit and power supply apparatusTAMURA SEISAKUSHO KK·Filed 2005·Granted Sep 26, 2006·16 cites·5 claims
- 3677US12557361B2Schottky barrier diode with high withstand voltageTAMURA SEISAKUSHO KK·Filed 2022·Granted Feb 17, 2026·0 cites·13 claims
- 3777US11047067B2Crystal laminate structureTAMURA SEISAKUSHO KK·Filed 2019·Granted Jun 29, 2021·1 cites·3 claims
- 3877US9915010B2Method for cultivating β-Ga2O3-based single crystal, and β-Ga2O3-based single crystal substrate and method for producing sameTAMURA SEISAKUSHO KK·Filed 2014·Granted Mar 13, 2018·1 cites·15 claims
- 3977USD453142SCircuit block for power supplyTAMURA SEISAKUSHO KK·Filed 2000·Granted Jan 29, 2002·23 cites·1 claims
- 4076USD1005142SCurrent sensorTAMURA SEISAKUSHO KK·Filed 2022·Granted Nov 21, 2023·6 cites·1 claims
- 4176US10358742B2Ga2O3-based crystal film, and crystal multilayer structureTAMURA SEISAKUSHO KK·Filed 2017·Granted Jul 23, 2019·2 cites·7 claims
- 4276US7557687B2Magnetic core for electromagnetic apparatus and electromagnetic apparatus provided with magnetic core for electromagnetic apparatusTAMURA SEISAKUSHO KK·Filed 2006·Granted Jul 7, 2009·7 cites·8 claims
- 4376US7167069B2Coil bobbin and transformerTAMURA SEISAKUSHO KK·Filed 2005·Granted Jan 23, 2007·8 cites·9 claims
- 4476US6507261B1Coil bobbin for current transformerTAMURA SEISAKUSHO KK·Filed 2000·Granted Jan 14, 2003·22 cites·8 claims
- 4576US5157368AThin type transformerTAMURA SEISAKUSHO KK·Filed 1991·Granted Oct 20, 1992·31 cites·4 claims
- 4676US2026070162A1Solder alloy, solder paste, printed circuit board, and electronic control deviceTAMURA SEISAKUSHO KK·Filed 2025·Application pending·0 cites
- 4775US12347598B2ReactorTAMURA SEISAKUSHO KK·Filed 2021·Granted Jul 1, 2025·0 cites·4 claims
- 4875US12104276B2Ga2O3-based single crystal substrateTAMURA SEISAKUSHO KK·Filed 2021·Granted Oct 1, 2024·0 cites·2 claims
- 4975US11525082B2Phosphor and production method thereof phosphor-including member, and light emitting device or projectorTAMURA SEISAKUSHO KK·Filed 2017·Granted Dec 13, 2022·1 cites·2 claims
- 5075US10633761B2GA2O3-based single crystal substrate, and production method thereforTAMURA SEISAKUSHO KK·Filed 2018·Granted Apr 28, 2020·0 cites·4 claims
Showing the top 50 of 220 patent records by PatentIndex Score.
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