Assignee
TEL EPION INC
US·54 granted patents·12 pending applications·574 citations·filing 2003–2019
Top patents by PatentIndex Score
66 records- 0198US7794798B2Method for depositing films using gas cluster ion beam processingTEL EPION INC·Filed 2007·Granted Sep 14, 2010·52 cites·53 claims
- 0297US7259036B2Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film productsTEL EPION INC·Filed 2005·Granted Aug 21, 2007·131 cites·40 claims
- 0395US7947582B2Material infusion in a trap layer structure using gas cluster ion beam processingTEL EPION INC·Filed 2009·Granted May 24, 2011·36 cites·22 claims
- 0494US7410890B2Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiationTEL EPION INC·Filed 2005·Granted Aug 12, 2008·28 cites·52 claims
- 0594US7377228B2System for and method of gas cluster ion beam processingTEL EPION INC·Filed 2003·Granted May 27, 2008·53 cites·23 claims
- 0693US7968422B2Method for forming trench isolation using a gas cluster ion beam growth processTEL EPION INC·Filed 2009·Granted Jun 28, 2011·22 cites·19 claims
- 0790US7696495B2Method and device for adjusting a beam property in a gas cluster ion beam systemTEL EPION INC·Filed 2007·Granted Apr 13, 2010·15 cites·20 claims
- 0890US7291558B2Copper interconnect wiring and method of forming thereofTEL EPION INC·Filed 2005·Granted Nov 6, 2007·17 cites·60 claims
- 0989US7825389B2Method and apparatus for controlling a gas cluster ion beam formed from a gas mixtureTEL EPION INC·Filed 2007·Granted Nov 2, 2010·15 cites·19 claims
- 1086US8372489B2Method for directional deposition using a gas cluster ion beamTEL EPION INC·Filed 2007·Granted Feb 12, 2013·9 cites·20 claims
- 1186US8048788B2Method for treating non-planar structures using gas cluster ion beam processingTEL EPION INC·Filed 2009·Granted Nov 1, 2011·10 cites·19 claims
- 1286US7799683B2Copper interconnect wiring and method and apparatus for forming thereofTEL EPION INC·Filed 2007·Granted Sep 21, 2010·9 cites·24 claims
- 1386US7566888B2Method and system for treating an interior surface of a workpiece using a charged particle beamTEL EPION INC·Filed 2007·Granted Jul 28, 2009·10 cites·23 claims
- 1486US7396745B2Formation of ultra-shallow junctions by gas-cluster ion irradiationTEL EPION INC·Filed 2005·Granted Jul 8, 2008·12 cites·35 claims
- 1585US7905199B2Method and system for directional growth using a gas cluster ion beamTEL EPION INC·Filed 2008·Granted Mar 15, 2011·8 cites·19 claims
- 1684US9209033B2GCIB etching method for adjusting fin height of finFET devicesTEL EPION INC·Filed 2014·Granted Dec 8, 2015·7 cites·20 claims
- 1784US7776743B2Method of forming semiconductor devices containing metal cap layersTEL EPION INC·Filed 2008·Granted Aug 17, 2010·9 cites·23 claims
- 1884US7642531B2Apparatus and method for reducing particulate contamination in gas cluster ion beam processing equipmentTEL EPION INC·Filed 2007·Granted Jan 5, 2010·7 cites·23 claims
- 1984US7550749B2Methods and processing systems for using a gas cluster ion beam to offset systematic non-uniformities in workpieces processed in a process toolTEL EPION INC·Filed 2007·Granted Jun 23, 2009·19 cites·25 claims
- 2083US7982196B2Method for modifying a material layer using gas cluster ion beam processingTEL EPION INC·Filed 2009·Granted Jul 19, 2011·6 cites·20 claims
- 2183US7608843B2Method and apparatus for scanning a workpiece through an ion beamTEL EPION INC·Filed 2006·Granted Oct 27, 2009·10 cites·25 claims
- 2282US7626183B2Methods for modifying features of a workpiece using a gas cluster ion beamTEL EPION INC·Filed 2007·Granted Dec 1, 2009·10 cites·15 claims
- 2380US7838423B2Method of forming capping structures on one or more material layer surfacesTEL EPION INC·Filed 2009·Granted Nov 23, 2010·5 cites·32 claims
- 2480US7754588B2Method to improve a copper/dielectric interface in semiconductor devicesTEL EPION INC·Filed 2007·Granted Jul 13, 2010·7 cites·7 claims
- 2579US7871929B2Method of forming semiconductor devices containing metal cap layersTEL EPION INC·Filed 2009·Granted Jan 18, 2011·6 cites·24 claims
- 2677US7564024B2Methods and apparatus for assigning a beam intensity profile to a gas cluster ion beam used to process workpiecesTEL EPION INC·Filed 2007·Granted Jul 21, 2009·11 cites·23 claims
- 2776US7981483B2Method to improve electrical leakage performance and to minimize electromigration in semiconductor devicesTEL EPION INC·Filed 2007·Granted Jul 19, 2011·7 cites·8 claims
- 2876US7550748B2Apparatus and methods for systematic non-uniformity correction using a gas cluster ion beamTEL EPION INC·Filed 2007·Granted Jun 23, 2009·8 cites·20 claims
- 2975US10096527B2Hybrid corrective processing system and methodTEL EPION INC·Filed 2016·Granted Oct 9, 2018·2 cites·20 claims
- 3074US9236221B2Molecular beam enhanced GCIB treatmentTEL EPION INC·Filed 2014·Granted Jan 12, 2016·2 cites·20 claims
- 3174US7917241B2Method and system for increasing throughput during location specific processing of a plurality of substratesTEL EPION INC·Filed 2007·Granted Mar 29, 2011·4 cites·20 claims
- 3273US8691103B2Surface profile adjustment using gas cluster ion beam processingTEL EPION INC·Filed 2012·Granted Apr 8, 2014·2 cites·13 claims
- 3372US9305746B2Pre-aligned nozzle/skimmerTEL EPION INC·Filed 2014·Granted Apr 5, 2016·2 cites·9 claims
- 3472US7883999B2Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beamTEL EPION INC·Filed 2008·Granted Feb 8, 2011·4 cites·25 claims
- 3571US9029808B2Low contamination scanner for GCIB systemTEL EPION INC·Filed 2014·Granted May 12, 2015·3 cites·18 claims
- 3670US7345856B2Method and apparatus for arc suppression in scanned ion beam processing equipmentTEL EPION INC·Filed 2005·Granted Mar 18, 2008·3 cites·9 claims
- 3769US8709944B2Method to alter silicide properties using GCIB treatmentTEL EPION INC·Filed 2013·Granted Apr 29, 2014·1 cites·17 claims
- 3869US8703607B2Method to alter silicide properties using GCIB treatmentTEL EPION INC·Filed 2013·Granted Apr 22, 2014·1 cites·7 claims
- 3968US7834327B2Self-biasing active load circuit and related power supply for use in a charged particle beam processing systemTEL EPION INC·Filed 2008·Granted Nov 16, 2010·2 cites·25 claims
- 4067US9502209B2Multi-step location specific process for substrate edge profile correction for GCIB systemTEL EPION INC·Filed 2015·Granted Nov 22, 2016·1 cites·9 claims
- 4167US7948734B2Electrostatic chuck power supplyTEL EPION INC·Filed 2008·Granted May 24, 2011·3 cites·20 claims
- 4266US9735019B2Process gas enhancement for beam treatment of a substrateTEL EPION INC·Filed 2015·Granted Aug 15, 2017·1 cites·20 claims
- 4365US9324567B2Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materialsTEL EPION INC·Filed 2013·Granted Apr 26, 2016·1 cites·23 claims
- 4464US9875947B2Method of surface profile correction using gas cluster ion beamTEL EPION INC·Filed 2016·Granted Jan 23, 2018·1 cites·20 claims
- 4563US9540725B2Method and apparatus for beam deflection in a gas cluster ion beam systemTEL EPION INC·Filed 2015·Granted Jan 10, 2017·1 cites·20 claims
- 4662US10861674B2Compensated location specific processing apparatus and methodTEL EPION INC·Filed 2019·Granted Dec 8, 2020·0 cites·19 claims
- 4761US8722542B2Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact viaTEL EPION INC·Filed 2013·Granted May 13, 2014·1 cites·18 claims
- 4858US9105443B2Multi-step location specific process for substrate edge profile correction for GCIB systemTEL EPION INC·Filed 2014·Granted Aug 11, 2015·0 cites·11 claims
- 4956US10497540B2Compensated location specific processing apparatus and methodTEL EPION INC·Filed 2018·Granted Dec 3, 2019·0 cites·19 claims
- 5055US2009130861A1Dual damascene integration structures and method of forming improved dual damascene integration structuresTEL EPION INC·Filed 2008·Application pending·0 cites
Showing the top 50 of 66 patent records by PatentIndex Score.
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